No. |
Part Name |
Description |
Manufacturer |
211 |
2N5195 |
MEDIUM POWER PNP SILICON TRANSISTOR |
SGS Thomson Microelectronics |
212 |
2N5320 |
SMALL SIGNAL NPN TRANSISTORS |
SGS Thomson Microelectronics |
213 |
2N5321 |
SMALL SIGNAL NPN TRANSISTORS |
SGS Thomson Microelectronics |
214 |
2N5322 |
SMALL SIGNAL PNP TRANSISTORS |
SGS Thomson Microelectronics |
215 |
2N5323 |
SMALL SIGNAL PNP TRANSISTORS |
SGS Thomson Microelectronics |
216 |
2N5415 |
SILICON PNP TRANSISTORS |
SGS Thomson Microelectronics |
217 |
2N5415S |
HIGH-VOLTAGE AMPLIFIER |
SGS Thomson Microelectronics |
218 |
2N5416 |
SILICON PNP TRANSISTORS |
SGS Thomson Microelectronics |
219 |
2N5589 |
NPN planar RF transistor for FM mobile applications |
SGS Thomson Microelectronics |
220 |
2N5590 |
NPN planar RF transistor for FM mobile applications |
SGS Thomson Microelectronics |
221 |
2N5591 |
NPN planar RF transistor for FM mobile applications |
SGS Thomson Microelectronics |
222 |
2N5635 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
223 |
2N5636 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
224 |
2N5637 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
225 |
2N5641 |
V(cbo): 65V; V(ceo): 35V; V(ebo): 4V; 15W; VHF power transistor |
SGS Thomson Microelectronics |
226 |
2N5642 |
V(cbo): 65V; V(ceo): 35V; V(ebo): 4V; 30W; VHF power transistor |
SGS Thomson Microelectronics |
227 |
2N5643 |
NPN RF transistor 28V Class C 40W |
SGS Thomson Microelectronics |
228 |
2N5643 |
V(cbo): 65V; V(ceo): 35V; V(ebo): 4V; 60W; VHF power transistor |
SGS Thomson Microelectronics |
229 |
2N5657 |
SILICON NPN TRANSISTOR |
SGS Thomson Microelectronics |
230 |
2N5657 |
SILICON NPN TRANSISTOR |
SGS Thomson Microelectronics |
231 |
2N5681 |
SILICON NPN TRANSISTORS |
SGS Thomson Microelectronics |
232 |
2N5681 |
SILICON NPN TRANSISTORS |
SGS Thomson Microelectronics |
233 |
2N5682 |
SILICON NPN TRANSISTORS |
SGS Thomson Microelectronics |
234 |
2N5682 |
SILICON NPN TRANSISTORS |
SGS Thomson Microelectronics |
235 |
2N5884 |
hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
236 |
2N5886 |
HIGH CURRENT SILICON NPN POWER TRANSISTOR |
SGS Thomson Microelectronics |
237 |
2N5944 |
450-512MHz CLASS C 12.5V NPN transistor for mobile applications |
SGS Thomson Microelectronics |
238 |
2N5945 |
450-512MHz CLASS C 12.5V 4W NPN RF transistor for mobile applications |
SGS Thomson Microelectronics |
239 |
2N5946 |
450-512MHz CLASS C 12.5V 10W NPN RF transistor for mobile applications |
SGS Thomson Microelectronics |
240 |
2N6034 |
PNP medium power darlington transistor, 4A , 40V |
SGS Thomson Microelectronics |
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