No. |
Part Name |
Description |
Manufacturer |
211 |
AT875 |
PHASE CONTROL THYRISTOR |
POSEICO SPA |
212 |
AT875LT |
PHASE CONTROL THYRISTOR |
POSEICO SPA |
213 |
AT875LTS44 |
PHASE CONTROL THYRISTOR |
POSEICO SPA |
214 |
AT875S44 |
PHASE CONTROL THYRISTOR |
POSEICO SPA |
215 |
FU-319SPA-6M20 |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
216 |
FU-319SPA-C6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
217 |
FU-319SPA-CV6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
218 |
FU-319SPA-V6M20 |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
219 |
FU-319SPA-W6M20 |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
220 |
FU-321SPA- 7/ 7M1 |
Optoelectronics - -10GBs Detector Modules |
Mitsubishi Electric Corporation |
221 |
SPA-1118 |
850 MHz 1 watt power amplifier with active bias. |
Stanford Microdevices |
222 |
SPA-1218 |
1960 MHz 1 watt power amplifier with active bias. |
Stanford Microdevices |
223 |
SPA-1318 |
2150 MHz 1 watt power amplifier with active bias. |
Stanford Microdevices |
224 |
SPA-2118 |
850 MHz, 1 Watt power amplifier with active bias. |
Stanford Microdevices |
225 |
SPA-2318 |
2150 MHz, 1 Watt power amplifier with active bias. |
Stanford Microdevices |
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