| No. |
Part Name |
Description |
Manufacturer |
| 211 |
APD-320G064 |
320 x 64 Graphics Display with Drive Electronics, TTL Level Data Interface, Integrated DC Converter, Slim Profile, Large Bright Characters and Graphics, Highly Visible for Long-Distance Viewing |
Vishay |
| 212 |
APPLICATION-NOTE |
4V Gate-Driven Power MOS FET With Low drain to source ON-STATE Resistance Application Note |
NEC |
| 213 |
BA243 |
Silicon Switching Diode, the forward resistance is constant and very little |
IPRS Baneasa |
| 214 |
BA244 |
Silicon Switching Diode, the forward resistance is constant and very little |
IPRS Baneasa |
| 215 |
BAR63 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 216 |
BAR63-03 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 217 |
BAR63-03W |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 218 |
BAR63-04 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 219 |
BAR63-04W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 220 |
BAR63-05 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 221 |
BAR63-05W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 222 |
BAR63-06 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 223 |
BAR63-06W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 224 |
BAR63-W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 225 |
BAS70 |
Low capacitance, low series inductance and resistance Schottky diodes |
ST Microelectronics |
| 226 |
BAS70KFILM |
Low capacitance, low series inductance and resistance Schottky diodes |
ST Microelectronics |
| 227 |
BD00C0AWFP-C |
35V Voltage Resistance 1A LDO Regulator |
ROHM |
| 228 |
BD00C0AWFP-CE2 |
35V Voltage Resistance 1A LDO Regulator |
ROHM |
| 229 |
BD00C0AWFP2-C |
35V Voltage Resistance 1A LDO Regulator |
ROHM |
| 230 |
BD00C0AWFP2-CE2 |
35V Voltage Resistance 1A LDO Regulator |
ROHM |
| 231 |
BD00C0AWFPS-M |
35V Voltage Resistance 1A LDO Regulator |
ROHM |
| 232 |
BD00C0AWFPS-ME2 |
35V Voltage Resistance 1A LDO Regulator |
ROHM |
| 233 |
BD00C0AWHFP-C |
35V Voltage Resistance 1A LDO Regulator |
ROHM |
| 234 |
BD00C0AWHFP-CTR |
35V Voltage Resistance 1A LDO Regulator |
ROHM |
| 235 |
BD00FC0WEFJ |
35V Voltage Resistance 1A LDO Regulator |
ROHM |
| 236 |
BD00FC0WEFJ-E2 |
35V Voltage Resistance 1A LDO Regulator |
ROHM |
| 237 |
BD30FC0WEFJ |
35V Voltage Resistance 1A LDO Regulator |
ROHM |
| 238 |
BD30FC0WEFJ-E2 |
35V Voltage Resistance 1A LDO Regulator |
ROHM |
| 239 |
BD33C0AFP-C |
35V Voltage Resistance 1A LDO Regulator |
ROHM |
| 240 |
BD33C0AFP-CE2 |
35V Voltage Resistance 1A LDO Regulator |
ROHM |
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