| No. |
Part Name |
Description |
Manufacturer |
| 211 |
NTE476 |
Silicon NPN Transistor RF Power Output |
NTE Electronics |
| 212 |
NTE477 |
Silicon NPN Transistor RF Power Output |
NTE Electronics |
| 213 |
NTE478 |
Silicon NPN Transistor RF Power Output, PO = 100W @ 175MHz |
NTE Electronics |
| 214 |
NTE480 |
Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz |
NTE Electronics |
| 215 |
NTE483 |
Silicon NPN Transistor RF Power Output for Mobile Use, PO = 18W @ 866MHz |
NTE Electronics |
| 216 |
NTE484 |
Silicon NPN Transistor RF Power Output for Mobile Use, PO = 25W @ 947MHz |
NTE Electronics |
| 217 |
NTE486 |
Silicon NPN Transistor RF High Frequency Amplifier |
NTE Electronics |
| 218 |
NTE488 |
Silicon NPN Transistor RF Power Output |
NTE Electronics |
| 219 |
NTE78 |
Silicon NPN Transistor RF Power Output |
NTE Electronics |
| 220 |
ORN DIVIDER |
SOIC 8 Pin 4 Resistor Ratio Divider |
Vishay |
| 221 |
PEMB10 |
PNP resistor-equipped double transistor R1 = 2.2 kOhm, R2 = 47 kOhm |
Philips |
| 222 |
PEMB2 |
PNP resistor-equipped double transistor R1 = 47 kOhm, R2 = 47 kOhm |
Philips |
| 223 |
PEMB3 |
PNP resistor-equipped double transistor R1 = 4.7 kOhm, R2 = open |
Philips |
| 224 |
PEMB4 |
PNP resistor-equipped double transistor R1 = 10 kOhm, R2 = open |
Philips |
| 225 |
PEMH4 |
NPN resistor equipped transistor R1 = 10 kOhm/R2 = open |
Philips |
| 226 |
QRB1113 |
PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR |
Fairchild Semiconductor |
| 227 |
QRB1114 |
PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR |
Fairchild Semiconductor |
| 228 |
QRB1133 |
PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR |
Fairchild Semiconductor |
| 229 |
QRB1134 |
PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR |
Fairchild Semiconductor |
| 230 |
QRC1133 |
PHOTOTRANSISTOR REFLECTIVE OBJECT SENSORS |
Fairchild Semiconductor |
| 231 |
SL355C |
4 Transistor Ring Modulator-Demodulators |
PLESSEY Semiconductors |
| 232 |
TBA673C |
4 Transistor Ring Modulator-Demodulators |
PLESSEY Semiconductors |
| | | |
