| No. |
Part Name |
Description |
Manufacturer |
| 211 |
GS881E18AT-250I |
250MHz 5.5ns 512K x 18 8Mb sync burst SRAM |
GSI Technology |
| 212 |
GS881E18BT-250 |
250MHz 5.5ns 512K x 18 9Mb sync burst SRAM |
GSI Technology |
| 213 |
GS881E18BT-250I |
250MHz 5.5ns 512K x 18 9Mb sync burst SRAM |
GSI Technology |
| 214 |
GS881E36AT-250 |
250MHz 5.5ns 256K x 36 8Mb sync burst SRAM |
GSI Technology |
| 215 |
GS881E36AT-250I |
250MHz 5.5ns 256K x 36 8Mb sync burst SRAM |
GSI Technology |
| 216 |
GS881E36BT-250 |
250MHz 5.5ns 256K x 36 9Mb sync burst SRAM |
GSI Technology |
| 217 |
GS881E36BT-250I |
250MHz 5.5ns 256K x 36 9Mb sync burst SRAM |
GSI Technology |
| 218 |
GS881Z18AT-250 |
250MHz 5.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM |
GSI Technology |
| 219 |
GS881Z18AT-250I |
250MHz 5.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM |
GSI Technology |
| 220 |
GS881Z18BT-250 |
250MHz 5.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM |
GSI Technology |
| 221 |
GS881Z18BT-250I |
250MHz 5.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM |
GSI Technology |
| 222 |
GS881Z36AT-250 |
250MHz 5.5ns 256K x 36 8Mb pupelined and flow through sync NBT SRAM |
GSI Technology |
| 223 |
GS881Z36AT-250I |
250MHz 5.5ns 256K x 36 8Mb pupelined and flow through sync NBT SRAM |
GSI Technology |
| 224 |
GS881Z36BT-250 |
250MHz 5.5ns 256K x 36 9Mb pupelined and flow through sync NBT SRAM |
GSI Technology |
| 225 |
GS881Z36BT-250I |
250MHz 5.5ns 256K x 36 9Mb pupelined and flow through sync NBT SRAM |
GSI Technology |
| 226 |
HM530281RTT-25 |
25ns; V(cc): -1.0 to +7.0V; 1W; ; 331,776-word x 8-bit flame memory |
Hitachi Semiconductor |
| 227 |
HM530281TT-25 |
331,776 WORD X 8 BIT FRAME MEMORY |
Hitachi Semiconductor |
| 228 |
HN58V1001T-25 |
1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function |
Hitachi Semiconductor |
| 229 |
HN58V1001T-25 |
Memory>EEPROM>Parallel EEPROM |
Renesas |
| 230 |
HN58V1001T-25E |
Memory>EEPROM>Parallel EEPROM |
Renesas |
| 231 |
HY5DU281622ET-25 |
128M(8Mx16) GDDR SDRAM |
Hynix Semiconductor |
| 232 |
KIC3201T-25 |
CMOS Linear Integrated Circuit |
Korea Electronics (KEC) |
| 233 |
LE28FV4001T-25 |
4MEG (524288words x 8bit) flash memory |
SANYO |
| 234 |
MCP1316T-25LE/OT |
Power Management - System Supervisors/Voltage Detectors |
Microchip |
| 235 |
MCP131T-250E/TT |
Power Management - System Supervisors/Voltage Detectors |
Microchip |
| 236 |
MCP1320T-25LE/OT |
Power Management - System Supervisors/Voltage Detectors |
Microchip |
| 237 |
MCP1501T-25E/CHY |
Power Management- Voltage References |
Microchip |
| 238 |
MCP1501T-25E/RW |
Power Management- Voltage References |
Microchip |
| 239 |
MCP1501T-25E/SN |
Power Management- Voltage References |
Microchip |
| 240 |
MCP1602T-250I/MF |
Power Management- Switching Regulators |
Microchip |
| | | |
