| No. |
Part Name |
Description |
Manufacturer |
| 211 |
104S8AX0 |
Selenium Contact Protector Rectifiers, DC applications - 10 breaks/second max |
ITT Semiconductors |
| 212 |
104S8AX1 |
Selenium Contact Protector Rectifiers, DC applications - 40 breaks/second max |
ITT Semiconductors |
| 213 |
104S8EX0 |
Selenium Contact Protector Rectifiers, DC applications - 10 breaks/second max |
ITT Semiconductors |
| 214 |
104S8EX1 |
Selenium Contact Protector Rectifiers, DC applications - 40 breaks/second max |
ITT Semiconductors |
| 215 |
104S9AX0 |
Selenium Contact Protector Rectifiers, DC applications - 10 breaks/second max |
ITT Semiconductors |
| 216 |
104S9AX1 |
Selenium Contact Protector Rectifiers, DC applications - 40 breaks/second max |
ITT Semiconductors |
| 217 |
104S9EX0 |
Selenium Contact Protector Rectifiers, DC applications - 10 breaks/second max |
ITT Semiconductors |
| 218 |
104S9EX1 |
Selenium Contact Protector Rectifiers, DC applications - 40 breaks/second max |
ITT Semiconductors |
| 219 |
10B4B41 |
RECTIFIER STACK (BRIDGE) |
TOSHIBA |
| 220 |
10D4B41 |
RECTIFIER STACK (BRIDGE) |
TOSHIBA |
| 221 |
10DL2C41A |
HIGH EFFICIENCY DIODE STACK (HED) SWITCHING MODE POWER SUPPLY APPLICATIONS��CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 222 |
10FWJ2C42 |
SCHOTTKY BARRIER RECTIFIER STACK (HIGH SPEED RECTIFIER APPLICATIONS) |
TOSHIBA |
| 223 |
10FWJ2C48M |
SCHOTTKY BARRIER RECTIFIER STACK |
TOSHIBA |
| 224 |
10FWJ2CZ47M |
SCHOTTKY BARRIER RECTIFIER STACK |
TOSHIBA |
| 225 |
10GL2CZ47A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE |
TOSHIBA |
| 226 |
10GWJ2C42 |
SCHOTTKY BARRIER RECTIFIER STACK (SWITCHING TYPE POWER SUPPLY APPLICATION) |
TOSHIBA |
| 227 |
10GWJ2C48 |
SCHOTTKY BARRIER RECTIFIER STACK (SWITCHING TYPE POWER SUPPLY APPLICATION) |
TOSHIBA |
| 228 |
10GWJ2C48C |
SCHOTTKY BARRIER RECTIFIER STACK |
TOSHIBA |
| 229 |
10GWJ2C48C |
SCHOTTKY BARRIER RECTIFIER STACK |
TOSHIBA |
| 230 |
10GWJ2CZ47C |
SCHOTTKY BARRIER RECTIFIER STACK |
TOSHIBA |
| 231 |
10J4B41 |
RECTIFIER STACK (BRIDGE) |
TOSHIBA |
| 232 |
10JL2C48A |
HIGH EFFICIENCY DIODE STACK (HED) |
TOSHIBA |
| 233 |
10JL2CZ47 |
HIGH EFFICIENCY DIODE STACK (HED) |
TOSHIBA |
| 234 |
10JL2CZ47A |
HIGH EFFICIENCY DIODE STACK (HED) |
TOSHIBA |
| 235 |
12136AF |
Dolby B-Type Noise Reduction System |
Hitachi Semiconductor |
| 236 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Serial Presence Detec |
Samsung Electronic |
| 237 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet |
Samsung Electronic |
| 238 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet |
Samsung Electronic |
| 239 |
12G2C2 |
RECTIFIER STACK |
TOSHIBA |
| 240 |
12G3A2 |
RECTIFIER STACK |
TOSHIBA |
| | | |
