| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2SA12 |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
| 212 |
2SA12H |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
| 213 |
2SA15 |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 214 |
2SA15H |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier |
Hitachi Semiconductor |
| 215 |
2SA17H |
Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 216 |
2SA18H |
Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 217 |
2SA234 |
Germanium Transistor PNP MESA, intended for use in FM Intermediate Frequency Amplifier, SW Frequency Converter |
Hitachi Semiconductor |
| 218 |
2SA235 |
Germanium Transistor PNP MESA, intended for use in FM RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 219 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
| 220 |
2SA351 |
Germanium PNP Transistor Drift Junction, intended for use in SW Oscillator, Frequency Converter |
Hitachi Semiconductor |
| 221 |
2SA352 |
Germanium PNP Transistor Drift Junction, intended for use in SW Mixer |
Hitachi Semiconductor |
| 222 |
2SA353 |
Germanium PNP Transistor Drift Junction, intended for use in 455kHz Intermediate Frequency Amplifier |
Hitachi Semiconductor |
| 223 |
2SA354 |
Germanium PNP Transistor Drift Junction, intended for use in MW Frequency Converter |
Hitachi Semiconductor |
| 224 |
2SA355 |
Germanium PNP Transistor Drift Junction, intended for use in MW RF Amplifier |
Hitachi Semiconductor |
| 225 |
2SA493 |
SILICON PNP EPITAXIAL TRANSISTOR (PCT PROCESS)(TENTATIVE) |
Unknow |
| 226 |
2SA537 |
Silicon PNP Epitaxial Planar Transistor Vcbo=-60V, Vceo=-50V, intended for use in HiFi Amp. Driver, Power Output |
Hitachi Semiconductor |
| 227 |
2SA537A |
Silicon PNP Epitaxial Planar Transistor Vcbo=-90V, Vceo=--80V, intended for use in HiFi Amp. Driver, Power Output |
Hitachi Semiconductor |
| 228 |
2SA537AH |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 229 |
2SA537H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 230 |
2SA548H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching, RF Amplifier |
Hitachi Semiconductor |
| 231 |
2SA549AH |
Silicon PNP Triple Diffused Planar Transistor, intended for use in High Speed Switching, Indicater Tube Driver |
Hitachi Semiconductor |
| 232 |
2SA565 |
Silicon PNP Epitaxial Planar Transistor, intended for use in HiFi AMP. Driver, Power Output |
Hitachi Semiconductor |
| 233 |
2SA566 |
Silicon PNP Epitaxial Planar Transistor, intended for use in HiFi AMP. Driver, Power Output |
Hitachi Semiconductor |
| 234 |
2SA679 |
SILICON PNP EPITAXIAL MESA TRANSISTOR (TENTATIVE) |
Unknow |
| 235 |
2SA680 |
SILICON PNP EPITAXIAL MESA TRANSISTOR (TENTATIVE) |
Unknow |
| 236 |
2SA839 |
SILICON PNP TRIPLE DIFFUSED MESA TRANSISTOR(TENTATIVE) |
Unknow |
| 237 |
2SB156 |
Germanium PNP Transistor Alloyed Junction Vcbo=-16V, Vebo=-2.5V, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 238 |
2SB156A |
Germanium PNP Transistor Alloyed Junction Vcbo=-20V, Vebo=-6V, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 239 |
2SB331H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, High Power Switching |
Hitachi Semiconductor |
| 240 |
2SB332H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, High Power Switching |
Hitachi Semiconductor |
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