| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N5321 |
SMALL SIGNAL NPN TRANSISTORS |
SGS Thomson Microelectronics |
| 212 |
2N5322 |
SMALL SIGNAL PNP TRANSISTORS |
SGS Thomson Microelectronics |
| 213 |
2N5323 |
SMALL SIGNAL PNP TRANSISTORS |
SGS Thomson Microelectronics |
| 214 |
2N5415 |
SILICON PNP TRANSISTORS |
SGS Thomson Microelectronics |
| 215 |
2N5415S |
HIGH-VOLTAGE AMPLIFIER |
SGS Thomson Microelectronics |
| 216 |
2N5416 |
SILICON PNP TRANSISTORS |
SGS Thomson Microelectronics |
| 217 |
2N5589 |
NPN planar RF transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 218 |
2N5590 |
NPN planar RF transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 219 |
2N5591 |
NPN planar RF transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 220 |
2N5635 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
| 221 |
2N5636 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
| 222 |
2N5637 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
| 223 |
2N5641 |
V(cbo): 65V; V(ceo): 35V; V(ebo): 4V; 15W; VHF power transistor |
SGS Thomson Microelectronics |
| 224 |
2N5642 |
V(cbo): 65V; V(ceo): 35V; V(ebo): 4V; 30W; VHF power transistor |
SGS Thomson Microelectronics |
| 225 |
2N5643 |
NPN RF transistor 28V Class C 40W |
SGS Thomson Microelectronics |
| 226 |
2N5643 |
V(cbo): 65V; V(ceo): 35V; V(ebo): 4V; 60W; VHF power transistor |
SGS Thomson Microelectronics |
| 227 |
2N5657 |
SILICON NPN TRANSISTOR |
SGS Thomson Microelectronics |
| 228 |
2N5657 |
SILICON NPN TRANSISTOR |
SGS Thomson Microelectronics |
| 229 |
2N5681 |
SILICON NPN TRANSISTORS |
SGS Thomson Microelectronics |
| 230 |
2N5681 |
SILICON NPN TRANSISTORS |
SGS Thomson Microelectronics |
| 231 |
2N5682 |
SILICON NPN TRANSISTORS |
SGS Thomson Microelectronics |
| 232 |
2N5682 |
SILICON NPN TRANSISTORS |
SGS Thomson Microelectronics |
| 233 |
2N5884 |
hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
| 234 |
2N5886 |
HIGH CURRENT SILICON NPN POWER TRANSISTOR |
SGS Thomson Microelectronics |
| 235 |
2N5944 |
450-512MHz CLASS C 12.5V NPN transistor for mobile applications |
SGS Thomson Microelectronics |
| 236 |
2N5945 |
450-512MHz CLASS C 12.5V 4W NPN RF transistor for mobile applications |
SGS Thomson Microelectronics |
| 237 |
2N5946 |
450-512MHz CLASS C 12.5V 10W NPN RF transistor for mobile applications |
SGS Thomson Microelectronics |
| 238 |
2N6034 |
PNP medium power darlington transistor, 4A , 40V |
SGS Thomson Microelectronics |
| 239 |
2N6035 |
PNP medium power darlington transistor, 4A , 60V |
SGS Thomson Microelectronics |
| 240 |
2N6036 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
SGS Thomson Microelectronics |
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