| No. |
Part Name |
Description |
Manufacturer |
| 211 |
1P21 |
PHOTOMULTIPLIER TUBE |
Hamamatsu Corporation |
| 212 |
1P28 |
PHOTOMULTIPLIER TUBE |
Hamamatsu Corporation |
| 213 |
1S1650 |
Silicon planar variable capacitance diode, suitable for Radio Tunner, Multiplier and Oscillator |
TOSHIBA |
| 214 |
1S1651 |
Silicon planar variable capacitance diode, suitable for Radio Tunner, Multiplier and Oscillator |
TOSHIBA |
| 215 |
2N2415 |
Germanium ultra-high frequency transistor for very low-noise, high-gain amplifiers, oscillators, mixers, and frequency multipliers |
Motorola |
| 216 |
2N2416 |
Germanium ultra-high frequency transistor for very low-noise, high-gain amplifiers, oscillators, mixers, and frequency multipliers |
Motorola |
| 217 |
2N3279 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 218 |
2N3280 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 219 |
2N3281 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 220 |
2N3282 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 221 |
2N3733 |
NPN silicon transistor designed for amplifier, frequency multiplier and oscillator applications |
Motorola |
| 222 |
2N3866 |
NPN silicon transistor, designed for amplifier, frequency-multiplier, or oscillator applications in military and industrial equipment |
Motorola |
| 223 |
2N4012 |
NPN silicon transistor designed for frequency-multiplication applications |
Motorola |
| 224 |
2N700 |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 225 |
2N700A |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 226 |
2N741 |
PNP germanium mesa transistor for oscillator, frequency multiplier and amplifier applications |
Motorola |
| 227 |
2N741A |
PNP germanium mesa transistor for oscillator, frequency multiplier and amplifier applications |
Motorola |
| 228 |
2SC547 |
Silicon NPN epitaxial planar transistor, VHF power amplifier, frequency multiplier and RF power Driver applications |
TOSHIBA |
| 229 |
2SC549 |
Silicon NPN epitaxial planar transistor, VHF power amplifier, frequency multiplier and RF power driver applications |
TOSHIBA |
| 230 |
3102 |
200 V three phase bridge 2 A forward current, 3000 ns recovery time |
Voltage Multipliers |
| 231 |
3102F |
200 V three phase bridge 2 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 232 |
3102UF |
200 V three phase bridge 2 A forward current, 70 ns recovery time |
Voltage Multipliers |
| 233 |
3106 |
600 V three phase bridge 2 A forward current, 3000 ns recovery time |
Voltage Multipliers |
| 234 |
3106F |
600 V three phase bridge 2 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 235 |
3106UF |
600 V three phase bridge 2 A forward current, 70 ns recovery time |
Voltage Multipliers |
| 236 |
3110 |
1000 V three phase bridge 2 A forward current, 3000 ns recovery time |
Voltage Multipliers |
| 237 |
3110F |
1000 V three phase bridge 2 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 238 |
3110UF |
1000 V three phase bridge 2 A forward current, 70 ns recovery time |
Voltage Multipliers |
| 239 |
3202 |
200 V - 1,000 V Three Phase Bridge |
Voltage Multipliers |
| 240 |
3202F |
200 V - 1,000 V Three Phase Bridge |
Voltage Multipliers |
| | | |
