No. |
Part Name |
Description |
Manufacturer |
211 |
2N6291 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
212 |
2N6291 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
213 |
2N6292 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
214 |
2N6292 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
215 |
2N6293 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
216 |
2N6293 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
217 |
2N6473 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
218 |
2N6473 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 110V. |
General Electric Solid State |
219 |
2N6474 |
130 V, epitaxial-base NPN selicon versawatt transistor |
Boca Semiconductor Corporation |
220 |
2N6474 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 130V. |
General Electric Solid State |
221 |
2N6475 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
222 |
2N6475 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -110V. |
General Electric Solid State |
223 |
2N6476 |
Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors |
Boca Semiconductor Corporation |
224 |
2N6476 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -130V. |
General Electric Solid State |
225 |
2N6486 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 50V. |
General Electric Solid State |
226 |
2N6487 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 70V. |
General Electric Solid State |
227 |
2N6488 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 90V. |
General Electric Solid State |
228 |
2N6489 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -50V. |
General Electric Solid State |
229 |
2N6490 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -70V. |
General Electric Solid State |
230 |
2N6491 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -90V. |
General Electric Solid State |
231 |
2N6702 |
High-current silicon N-P-N VERSAWATT transistor. |
General Electric Solid State |
232 |
2N6703 |
High-current silicon N-P-N VERSAWATT transistor. |
General Electric Solid State |
233 |
2N6704 |
High-current silicon N-P-N VERSAWATT transistor. |
General Electric Solid State |
234 |
31402B2A |
DUAL MONOSTABLE MULTIVIBRATORS WITH SCHMITT TRIGGER INPUTS |
Texas Instruments |
235 |
31402BEA |
DUAL MONOSTABLE MULTIVIBRATORS WITH SCHMITT TRIGGER INPUTS |
Texas Instruments |
236 |
31402BFA |
DUAL MONOSTABLE MULTIVIBRATORS WITH SCHMITT TRIGGER INPUTS |
Texas Instruments |
237 |
3PMT5 |
POWERMITE Low Profile 1500 Watt Transient Voltage Suppressor |
Microsemi |
238 |
4093B |
Quadruple 2-input NAND Schmitt trigger |
Philips |
239 |
5413 |
Dual 4-Input Schmitt trigger |
Fairchild Semiconductor |
240 |
54132 |
Quad 2-Input Schmitt Trigger NAND Gate |
Fairchild Semiconductor |
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