| No. |
Part Name |
Description |
Manufacturer |
| 211 |
DS1672U-33 |
Low Voltage Serial Timekeeping Chip |
MAXIM - Dallas Semiconductor |
| 212 |
DS1672U-33+ |
I²C 32-Bit Binary Counter RTC |
MAXIM - Dallas Semiconductor |
| 213 |
DS1672U-33+T&R |
I²C 32-Bit Binary Counter RTC |
MAXIM - Dallas Semiconductor |
| 214 |
DS1672U-33/T&R |
I²C 32-Bit Binary Counter RTC |
MAXIM - Dallas Semiconductor |
| 215 |
FMU-32R |
Fast-Recovery Rectifier Diodes |
Sanken |
| 216 |
FMU-32S |
Fast-Recovery Rectifier Diodes |
Sanken |
| 217 |
FMU-32S, R |
Fast-Recovery Rectifier Diodes |
Sanken |
| 218 |
FMU-34R |
Fast-Recovery Rectifier Diodes |
Sanken |
| 219 |
FMU-34S |
Fast-Recovery Rectifier Diodes |
Sanken |
| 220 |
FMU-34S, R |
Fast-Recovery Rectifier Diodes |
Sanken |
| 221 |
FMU-36R |
Fast-Recovery Rectifier Diodes |
Sanken |
| 222 |
FMU-36S |
Fast-Recovery Rectifier Diodes |
Sanken |
| 223 |
FMU-36S, R |
Fast-Recovery Rectifier Diodes (600 to 1000V) |
Sanken |
| 224 |
FU-311SPP-CV3 |
InGaAs PD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
| 225 |
FU-311SPP-CV4 |
InGaAs PD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
| 226 |
FU-318AP-M6 |
InGaAs APD MODULE FOR LONG WAVELENGTH BAND |
Mitsubishi Electric Corporation |
| 227 |
FU-318SAP-M6 |
InGaAs APD MODULE FOR LONG WAVELENGTH BAND |
Mitsubishi Electric Corporation |
| 228 |
FU-319SPA-6M20 |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
| 229 |
FU-319SPA-C6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
| 230 |
FU-319SPA-CV6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
| 231 |
FU-319SPA-V6M20 |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
| 232 |
FU-319SPA-W6M20 |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
| 233 |
FU-319SPP-C6 |
InGaAs PD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
| 234 |
FU-319SPP-CV6 |
InGaAs PD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
| 235 |
FU-321SPA- 7/ 7M1 |
Optoelectronics - -10GBs Detector Modules |
Mitsubishi Electric Corporation |
| 236 |
FU-321SPP- 7/ 7M1 |
Optoelectronics - -10GBs Detector Modules |
Mitsubishi Electric Corporation |
| 237 |
FU-39PD |
PD MODULE FOR LONG WAVELENGTH BAND |
Mitsubishi Electric Corporation |
| 238 |
FU-39SPD-M1 |
PD MODULE FOR LONG WAVELENGTH BAND |
Mitsubishi Electric Corporation |
| 239 |
GU-3A |
Gate unit for thyristor |
TOSHIBA |
| 240 |
HYS64T128020GU-3.7-A |
DDR2 SDRAM Modules - 1GB (128Mx64) PC2 4300 4-4-4 2Bank; available 2Q/04 |
Infineon |
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