No. |
Part Name |
Description |
Manufacturer |
211 |
ASM3P2969AF-08TR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
212 |
ASM3P2969AF-08TT |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
213 |
ASM3P5821A |
3.3 V, 20 MHz to 34 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
214 |
ASM3P623S05 |
Timing-Safe™ Peak EMI Reduction IC |
ON Semiconductor |
215 |
ASM3X2105AFS |
5 V, 6 MHz to 10 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
216 |
ASM3X2105AFSR |
5 V, 6 MHz to 10 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
217 |
ASM3X2105AFT |
5 V, 6 MHz to 10 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
218 |
ASM3X2105AFTR |
5 V, 6 MHz to 10 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
219 |
AT91RM9200 |
The AT91RM9200 features a 200 MIPS ARM920T processor with 16K-byte instruction and 16K-byte data cache memories, 16K bytes of SRAM, 128K bytes of ROM, External Bus Interface featuring SDRAM, Burst Flash and Static Memory Controllers, USB D |
Atmel |
220 |
B120_B |
20V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
221 |
B130_B |
30V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
222 |
B140_B |
40V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
223 |
B150_B |
50V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
224 |
B160_B |
60V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
225 |
B220_A |
20V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
226 |
B230_A |
30V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
227 |
B240_A |
40V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
228 |
B250_A |
50V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
229 |
B260_A |
60V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
230 |
B320_A_B |
20V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
231 |
B330_A_B |
30V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
232 |
B340_A_B |
40V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
233 |
B350_A_B |
50V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
234 |
B360_A_B |
60V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
235 |
BR261 |
BelaSigna® R261 Advanced Noise Reduction Solution for Voice Capture Devices |
ON Semiconductor |
236 |
BR262 |
Wideband Voice Capture and Noise Reduction SoC |
ON Semiconductor |
237 |
CM-99115 |
Professional to HiFi Level Reduction Transformer |
etc |
238 |
CX20187 |
Dolby B-C Type Noise Reduction System |
SONY |
239 |
CX20188 |
Dolby B-C Type Noise Reduction System |
SONY |
240 |
CXA1097Q |
Dolby B-C Type Noise Reduction System |
SONY |
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