| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N5772 |
NPN Transistor - Saturated Switches |
National Semiconductor |
| 212 |
2N5910 |
PNP Transistor - Saturated Switches |
National Semiconductor |
| 213 |
2N6034 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 214 |
2N6035 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 215 |
2N6036 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 216 |
2N6037 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 217 |
2N6038 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 218 |
2N6039 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 219 |
2N6050 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
| 220 |
2N6051 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
| 221 |
2N6052 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
| 222 |
2N6053 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
| 223 |
2N6054 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
| 224 |
2N6055 |
Silicon epitaxial-base NPN power transistors in monolithic Darlington configuration |
SGS-ATES |
| 225 |
2N6056 |
Silicon epitaxial-base NPN power transistors in monolithic Darlington configuration |
SGS-ATES |
| 226 |
2N6057 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
| 227 |
2N6058 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
| 228 |
2N6059 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
| 229 |
2N6386 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
| 230 |
2N6387 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
| 231 |
2N6388 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
| 232 |
2N706 |
Transistor, high speed saturated switches |
SGS-ATES |
| 233 |
2N706A |
Transistor, high speed saturated switches |
SGS-ATES |
| 234 |
2N708 |
Transistor, high speed saturated switches |
SGS-ATES |
| 235 |
2N709 |
Transistor, high speed saturated switches |
SGS-ATES |
| 236 |
2N709A |
Transistor, high speed saturated switches |
SGS-ATES |
| 237 |
2N722 |
Transistor, high speed saturated switches |
SGS-ATES |
| 238 |
2N743 |
Transistor, high speed saturated switches |
SGS-ATES |
| 239 |
2N744 |
Transistor, high speed saturated switches |
SGS-ATES |
| 240 |
2N753 |
Transistor, high speed saturated switches |
SGS-ATES |
| | | |
