| No. |
Part Name |
Description |
Manufacturer |
| 211 |
DS912_36 |
Rectifier diode. All purpose high power rectifier diodes, non-controllable rectifiers. Free-wheeling diodes, welding & traction. Vrrm = 3600V, Vrsm = 3700V. |
USHA India LTD |
| 212 |
DS912_40 |
Rectifier diode. All purpose high power rectifier diodes, non-controllable rectifiers. Free-wheeling diodes, welding & traction. Vrrm = 4000V, Vrsm = 4100V. |
USHA India LTD |
| 213 |
DS912_44 |
Rectifier diode. All purpose high power rectifier diodes, non-controllable rectifiers. Free-wheeling diodes, welding & traction. Vrrm = 4400V, Vrsm = 4500V. |
USHA India LTD |
| 214 |
DS912_48 |
Rectifier diode. All purpose high power rectifier diodes, non-controllable rectifiers. Free-wheeling diodes, welding & traction. Vrrm = 4800V, Vrsm = 4900V. |
USHA India LTD |
| 215 |
DS912_56 |
Rectifier diode. All purpose high power rectifier diodes, non-controllable rectifiers. Free-wheeling diodes, welding & traction. Vrrm = 5600V, Vrsm = 5700V. |
USHA India LTD |
| 216 |
FFM101 |
Surface mount glass passivated fast recovery silicon rectifier. MaxVRRM = 50V, maxVRMS = 35V, maxVDC = 50V. Current 1.0A. |
Rectron Semiconductor |
| 217 |
FFM102 |
Surface mount glass passivated fast recovery silicon rectifier. MaxVRRM = 100V, maxVRMS = 70V, maxVDC = 100V. Current 1.0A. |
Rectron Semiconductor |
| 218 |
FFM103 |
Surface mount glass passivated fast recovery silicon rectifier. MaxVRRM = 200V, maxVRMS = 140V, maxVDC = 200V. Current 1.0A. |
Rectron Semiconductor |
| 219 |
FFM104 |
Surface mount glass passivated fast recovery silicon rectifier. MaxVRRM = 400V, maxVRMS = 280V, maxVDC = 400V. Current 1.0A. |
Rectron Semiconductor |
| 220 |
FFM105 |
Surface mount glass passivated fast recovery silicon rectifier. MaxVRRM = 600V, maxVRMS = 420V, maxVDC = 600V. Current 1.0A. |
Rectron Semiconductor |
| 221 |
FFM106 |
Surface mount glass passivated fast recovery silicon rectifier. MaxVRRM = 800V, maxVRMS = 560V, maxVDC = 800V. Current 1.0A. |
Rectron Semiconductor |
| 222 |
FFM107 |
Surface mount glass passivated fast recovery silicon rectifier. MaxVRRM = 1000V, maxVRMS = 700V, maxVDC = 1000V. Current 1.0A. |
Rectron Semiconductor |
| 223 |
NTE5305 |
Silicon bridge rectifier, 1.5 A. Maximum recurrent peak reverse voltage Vrrm = 600V. |
NTE Electronics |
| 224 |
NTE5306 |
Silicon bridge rectifier, 1.5 A. Maximum recurrent peak reverse voltage Vrrm = 800V. |
NTE Electronics |
| 225 |
NTE5409 |
Silicon controlled rectifier (SCR). 3 Amp sensitive gate. Repetitive peak reverse voltage Vrrm = 400V. |
NTE Electronics |
| 226 |
NTE5412 |
Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 60V. |
NTE Electronics |
| 227 |
NTE5413 |
Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 100V. |
NTE Electronics |
| 228 |
NTE5414 |
Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 200V. |
NTE Electronics |
| 229 |
NTE5415 |
Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 400V. |
NTE Electronics |
| 230 |
NTE5418 |
Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 400V. RMS on-state current It = 10A. |
NTE Electronics |
| 231 |
NTE5471 |
Silicon controlled rectifier (SCR). Peak repetitive reverse and reverse blocking voltage Vrrm,Vdrm = 100V. Forward current RMS Itrms = 8A. |
NTE Electronics |
| 232 |
NTE5472 |
Silicon controlled rectifier (SCR). Peak repetitive reverse and reverse blocking voltage Vrrm,Vdrm = 200V. Forward current RMS Itrms = 8A. |
NTE Electronics |
| 233 |
NTE5473 |
Silicon controlled rectifier (SCR). Peak repetitive reverse and reverse blocking voltage Vrrm,Vdrm = 300V. Forward current RMS Itrms = 8A. |
NTE Electronics |
| 234 |
NTE5474 |
Silicon controlled rectifier (SCR). Peak repetitive reverse and reverse blocking voltage Vrrm,Vdrm = 400V. Forward current RMS Itrms = 8A. |
NTE Electronics |
| 235 |
NTE5475 |
Silicon controlled rectifier (SCR). Peak repetitive reverse and reverse blocking voltage Vrrm,Vdrm = 500V. Forward current RMS Itrms = 8A. |
NTE Electronics |
| 236 |
NTE5515 |
Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 400V. RMS on-state current It(rms) = 20A. |
NTE Electronics |
| 237 |
NTE5518 |
Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 400V. RMS on-state current It(rms) = 35A. |
NTE Electronics |
| 238 |
NTE5521 |
Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 50V. RMS forard current It(rms) = 25A. |
NTE Electronics |
| 239 |
NTE5522 |
Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 100V. RMS forard current It(rms) = 25A. |
NTE Electronics |
| 240 |
NTE5523 |
Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 150V. RMS forard current It(rms) = 25A. |
NTE Electronics |
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