| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2SB370A |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 212 |
2SB370AH |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, Low Speed Switching |
Hitachi Semiconductor |
| 213 |
2SB435 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 214 |
2SB471 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 215 |
2SB471 |
GERMANIUM PNP ALLOYED JUNCTION AUDIO FREQUENCY POWER OUTPUT |
Unknow |
| 216 |
2SB472 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 217 |
2SB472 |
GERMANIUM PNP ALLOYED JUNCTION AUDIO FREQUENCY POWER OUTPUT |
Unknow |
| 218 |
2SB496 |
Germanium Transistor PNP Alloyed Junction, intended for use in Complementary Symmetry Power Output |
Hitachi Semiconductor |
| 219 |
2SB507 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 220 |
2SB511 |
LOW FREQUENCY POWER AMP APPLICATIONS |
Unknow |
| 221 |
2SB514 |
PNP Triple Diffused Planar Silicon Transistors 50V/2A Low-Frequency Power Amplifier Applications |
SANYO |
| 222 |
2SB515 |
Low Frequency Power Amp Applications |
SANYO |
| 223 |
2SB536 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
| 224 |
2SB537 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
| 225 |
2SB544 |
Low-Frequency Power Amp / Electronic Governor Applications |
SANYO |
| 226 |
2SB548 |
PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
NEC |
| 227 |
2SB548 |
Audio Frequency Power Amplifier |
Unknow |
| 228 |
2SB559 |
Low Frequency Power Amp, Medium Speed Switching Applications |
Unknow |
| 229 |
2SB560 |
Low-Frequency Power Amp Applications |
SANYO |
| 230 |
2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A. |
USHA India LTD |
| 231 |
2SB595 |
LOW FREQUENCY POWER AMPLIFIER(PNP EPITAXUAL) |
Wing Shing Computer Components |
| 232 |
2SB596 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 233 |
2SB598 |
FOR AUDIO FREQUENCY POWER AMP, CONVERTERS, ELECTRONIC GOVERNORS |
SANYO |
| 234 |
2SB624 |
AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 235 |
2SB631 |
PNP Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications |
SANYO |
| 236 |
2SB631K |
PNP Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications |
SANYO |
| 237 |
2SB632 |
PNP Epitaxial Planar Silicon Transistor 25V/35V, 2A Low-Frequency Power Amplifier Applications |
SANYO |
| 238 |
2SB632K |
PNP Epitaxial Planar Silicon Transistor 25V/35V, 2A Low-Frequency Power Amplifier Applications |
SANYO |
| 239 |
2SB633 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 240 |
2SB653A |
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD673A |
Unknow |
| | | |
