| No. |
Part Name |
Description |
Manufacturer |
| 2131 |
2M56Z |
Discrete Devices -Diode-Zener Diode & Array |
Taiwan Semiconductor |
| 2132 |
2M6.8Z |
Discrete Devices -Diode-Zener Diode & Array |
Taiwan Semiconductor |
| 2133 |
2M62Z |
Discrete Devices -Diode-Zener Diode & Array |
Taiwan Semiconductor |
| 2134 |
2M68Z |
Discrete Devices -Diode-Zener Diode & Array |
Taiwan Semiconductor |
| 2135 |
2M75Z |
Discrete Devices -Diode-Zener Diode & Array |
Taiwan Semiconductor |
| 2136 |
2M82Z |
Discrete Devices -Diode-Zener Diode & Array |
Taiwan Semiconductor |
| 2137 |
2M91Z |
Discrete Devices -Diode-Zener Diode & Array |
Taiwan Semiconductor |
| 2138 |
2N1304 |
NPN Transistor |
GPD Optoelectronic Devices |
| 2139 |
2N1522 |
Germanium Power Transistors |
GPD Optoelectronic Devices |
| 2140 |
2N158 |
Germanium Power Transistors |
GPD Optoelectronic Devices |
| 2141 |
2N1605 |
Germanium NPN Transistors |
GPD Optoelectronic Devices |
| 2142 |
2N2079A |
Germanium Power Transistor |
GPD Optoelectronic Devices |
| 2143 |
2N2453 |
DUAL BIPOLAR NPN DEVICES IN A HERMETICALLY SEALED LCC2 CERAMIC SURFACE MOUNT |
New Jersey Semiconductor |
| 2144 |
2N2453A |
DUAL BIPOLAR NPN DEVICES IN A HERMETICALLY SEALED LCC2 CERAMIC SURFACE MOUNT PACKAGE |
New Jersey Semiconductor |
| 2145 |
2N2528 |
Germanium Power Transistors |
GPD Optoelectronic Devices |
| 2146 |
2N2640 |
DUAL BIPOLAR NPN DEVICES IN A HERMETICALLY SEALED LCC2 CERAMIC SURFACE MOUNT |
New Jersey Semiconductor |
| 2147 |
2N2641 |
DUAL BIPOLAR NPN DEVICES IN A HERMETICALLY SEALED LCC2 CERAMIC SURFACE MOUNT |
New Jersey Semiconductor |
| 2148 |
2N2642 |
BIPOLAR DEVICES WITH POLARITY NPN |
New Jersey Semiconductor |
| 2149 |
2N2643 |
DUAL BIPOLAR NPN DEVICES IN A HERMETICALLY SEALED LCC2 CERAMIC SURFACE MOUNT |
New Jersey Semiconductor |
| 2150 |
2N2644 |
DUAL BIPOLAR NPN DEVICES IN A HERMETICALLY SEALED LCC2 CERAMIC SURFACE MOUNT |
New Jersey Semiconductor |
| 2151 |
2N2834 |
Power Transistors |
GPD Optoelectronic Devices |
| 2152 |
2N3055H |
NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. |
USHA India LTD |
| 2153 |
2N3423 |
BIPOLAR DEVICES WITH POLARITY NPN |
New Jersey Semiconductor |
| 2154 |
2N3996 |
100 V, 5 A high speed NPN transistor |
Solid State Devices Inc |
| 2155 |
2N3997 |
100 V, 5 A high speed NPN transistor |
Solid State Devices Inc |
| 2156 |
2N4234 |
PNP silicon power transistor ideal for use as drivers, switches, and direct replacement of germanium medium-power devices |
Motorola |
| 2157 |
2N4235 |
PNP silicon power transistor ideal for use as drivers, switches, and direct replacement of germanium medium-power devices |
Motorola |
| 2158 |
2N4236 |
PNP silicon power transistor ideal for use as drivers, switches, and direct replacement of germanium medium-power devices |
Motorola |
| 2159 |
2N4276 |
Germanium Power Transistors |
GPD Optoelectronic Devices |
| 2160 |
2N4398 |
High-power PNP silicon transistor, serves as direct replacements for germanium high-power devices |
Motorola |
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