No. |
Part Name |
Description |
Manufacturer |
2131 |
BTS441-T |
Smart High Side Switches - 4,75-41V, 20mΩ 21A TO220 |
Infineon |
2132 |
BTS441R |
Smart High Side Switches - 4,75-41V, 20mΩ 21A TO220 or TO 263 |
Infineon |
2133 |
BTS612-N1 |
Smart High Side Switches - 5,0-34V, 2x200Ω, Limit(scr) 4A TO220 |
Infineon |
2134 |
BTS621-L1 |
Smart High Side Switches - 2x100m� 5,0-34V Limit(scr) 8A TO220 |
Infineon |
2135 |
BTS949 |
Smart Low Side Switches - 60V, 18mΩ, 9,5A TO 220 |
Infineon |
2136 |
BU1001 |
βU1001 4 NPN 10mA transistors |
IPRS Baneasa |
2137 |
BU1004 |
βU1004 2 NPN 150mA transistors 3 base-diffusion resistors |
IPRS Baneasa |
2138 |
BU104 |
PNP silicon, mesa transistor |
Mikroelektronikai Vallalat |
2139 |
BU108 |
5A triple diffused power transistor NPN silicon |
Motorola |
2140 |
BU109 |
PNP silicon, mesa transistor |
Mikroelektronikai Vallalat |
2141 |
BU126 |
4A triple diffused power transistor NPN silicon 50W 750V |
Motorola |
2142 |
BU126A |
4A triple diffused power transistor NPN silicon 50W 700V |
Motorola |
2143 |
BU2001 |
βU2001 5 NPN 10mA transistors 1 Zener diode |
IPRS Baneasa |
2144 |
BU2003 |
βU2003 2 NPN 300mA transistors 1 J-FET current generator 2 Pinch resistors 1 capacitor |
IPRS Baneasa |
2145 |
BU204 |
NPN silicon mesa transistor |
Mikroelektronikai Vallalat |
2146 |
BU205 |
NPN silicon mesa transistor |
Mikroelektronikai Vallalat |
2147 |
BU426 |
6A triple diffused NPN silicon power transistor 113W |
Motorola |
2148 |
BU426A |
6A triple diffused NPN silicon power transistor 113W |
Motorola |
2149 |
BU426A |
Transistor polarity NPN Voltage Vce sat max 3 V Voltage Vceo 400 V Current Ic @ Vce sat 4 A Time fall @ Ic 0.75 ?s Current Ic av. 6 A Power Ptot 70 W Voltage Vces 900 V |
SGS Thomson Microelectronics |
2150 |
BUD42D-D |
High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability |
ON Semiconductor |
2151 |
BUD43D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability |
ON Semiconductor |
2152 |
BUF405A |
Transistor polarity NPN Voltage Vce sat max 2.8 V Voltage Vceo 450 V Current Ic @ Vce sat 2.5 A Time fall @ Ic 0.1 ?s Current Ic av. 7.5 A Power Ptot 80 W Voltage Vces 1000 V |
SGS Thomson Microelectronics |
2153 |
BUL42D-D |
High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability |
ON Semiconductor |
2154 |
BUY12 |
NPN silicon, multiepitaxial, mesa transistor |
Mikroelektronikai Vallalat |
2155 |
BUY12T |
NPN silicon, mesa transistor |
Mikroelektronikai Vallalat |
2156 |
BUZ10 |
N - CHANNEL 50V - 0.06Ohm - 23A TO-220 STripFET MOSFET |
SGS Thomson Microelectronics |
2157 |
BUZ10 |
N-CHANNEL 50V - 0.06 OHM - 23A TO-220 STRIPFET POWER MOSFET |
ST Microelectronics |
2158 |
BUZ11 |
N - CHANNEL 50V - 0.03Ohm - 33A TO-220 STripFET MOSFET |
SGS Thomson Microelectronics |
2159 |
BUZ11 |
N-CHANNEL 50V - 0.03 OHM - 30A TO-220 STRIPFET POWER MOSFET |
ST Microelectronics |
2160 |
BUZ11A |
N - CHANNEL 50V - 0.045Ohm - 26A TO-220 STripFET MOSFET |
SGS Thomson Microelectronics |
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