| No. |
Part Name |
Description |
Manufacturer |
| 2131 |
CTN638 |
0.750W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 40 - 160 hFE |
Continental Device India Limited |
| 2132 |
CTN639 |
0.750W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 25 - hFE |
Continental Device India Limited |
| 2133 |
CTN640 |
1.000W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 25 - hFE |
Continental Device India Limited |
| 2134 |
CV10440 |
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 2135 |
CV10806 |
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 2136 |
CV7588 |
BIPOLAR NPN DEVICE IN A GERMETICALLY SEALED TO18 METAL PACKAGE |
SemeLAB |
| 2137 |
CV7644 |
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. |
Vectron |
| 2138 |
CV7672 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 2139 |
CV7676 |
Bipolar PNP Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 2140 |
CV7738 |
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 2141 |
CV7770 |
Bipolar NPN Device in a Hermetically sealed TO5 Metal Package |
SemeLAB |
| 2142 |
CV9507 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 2143 |
CVG639 |
2.500W General Purpose NPN Plastic Leaded Transistor. 135V Vceo, 1.000A Ic, 25 - hFE |
Continental Device India Limited |
| 2144 |
CVG640 |
2.500W General Purpose PNP Plastic Leaded Transistor. 135V Vceo, 1.000A Ic, 25 - hFE |
Continental Device India Limited |
| 2145 |
DO-41 |
Hermetically Sealed Glass Axial Package |
Continental Device India Limited |
| 2146 |
L99MM70XP |
Integrated microprocessor driven device intended for LIN controlled exterior mirrors |
ST Microelectronics |
| 2147 |
L99MM70XPTR |
Integrated microprocessor driven device intended for LIN controlled exterior mirrors |
ST Microelectronics |
| 2148 |
LH1505 |
Device is not Implied at these or any Other conditions in Excess |
Siemens |
| 2149 |
LH1520 |
Device is not Implied at these or any Other conditions in Excess |
Siemens |
| 2150 |
LH1524 |
Device is not Implied at these or any Other conditions in Excess |
Siemens |
| 2151 |
LH1531 |
Device is not Implied at these or any Other conditions in Excess |
Siemens |
| 2152 |
LH1532 |
Device is not Implied at these or any Other conditions in Excess |
Siemens |
| 2153 |
LH1544 |
Device is not Implied at these or any Other conditions in Excess |
Siemens |
| 2154 |
MAX5969A |
IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated Power MOSFET |
MAXIM - Dallas Semiconductor |
| 2155 |
MAX5969AETB+ |
IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated Power MOSFET |
MAXIM - Dallas Semiconductor |
| 2156 |
MAX5969AETB+T |
IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated Power MOSFET |
MAXIM - Dallas Semiconductor |
| 2157 |
MAX5969AETE+ |
IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated Power MOSFET |
MAXIM - Dallas Semiconductor |
| 2158 |
MAX5969AETE+T |
IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated Power MOSFET |
MAXIM - Dallas Semiconductor |
| 2159 |
MAX5969B |
IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated Power MOSFET |
MAXIM - Dallas Semiconductor |
| 2160 |
MAX5969BETB+ |
IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated Power MOSFET |
MAXIM - Dallas Semiconductor |
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