| No. |
Part Name |
Description |
Manufacturer |
| 2131 |
500YKH22 |
FAST RECOVERY DIODE (HIGH SPEED RECTIFIER APPLICATIONS) |
TOSHIBA |
| 2132 |
50FXFG13 |
FAST RECOVERY DIODE (HIGH SPEED RECTIFIER APPLICATIONS) |
TOSHIBA |
| 2133 |
50FXFH13 |
FAST RECOVERY DIODE (HIGH SPEED RECTIFIER APPLICATIONS) |
TOSHIBA |
| 2134 |
50S116T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
| 2135 |
50S116T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
| 2136 |
50S116T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
| 2137 |
50S116T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
| 2138 |
50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
| 2139 |
50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
| 2140 |
54F161A |
Synchronous Presettable Binary Counter, are high-speed version of the 54F161 |
Fairchild Semiconductor |
| 2141 |
54F163A |
Synchronous Presettable Binary Counter, are high-speed version of the 54F163 |
Fairchild Semiconductor |
| 2142 |
54H183 |
DUAL HIGH SPEED ADDER |
Fairchild Semiconductor |
| 2143 |
54S416T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
| 2144 |
54S416T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
| 2145 |
54S416T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
| 2146 |
54S416T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
| 2147 |
54S416T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
| 2148 |
54S416T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
| 2149 |
5962-0051401Q2A |
Non-Inverting High Speed Power Drivers |
Texas Instruments |
| 2150 |
5962-0051401QEA |
Non-Inverting High Speed Power Drivers |
Texas Instruments |
| 2151 |
5962-0051401QPA |
Non-Inverting High Speed Power Drivers |
Texas Instruments |
| 2152 |
5962-0051401V2A |
Non-Inverting High Speed Power Drivers |
Texas Instruments |
| 2153 |
5962-0051401VEA |
Non-Inverting High Speed Power Drivers |
Texas Instruments |
| 2154 |
5962-0051401VPA |
Non-Inverting High Speed Power Drivers |
Texas Instruments |
| 2155 |
5962-0151201VPA |
Inverting High-Speed MOSFET Drivers |
Texas Instruments |
| 2156 |
5962-0724801VFA |
High-Speed Differential Receiver 16-CFP -55 to 125 |
Texas Instruments |
| 2157 |
5962-7802301MEA |
Quad High Speed Differential Line Drivers |
National Semiconductor |
| 2158 |
5962-7802301MEA |
Quad High Speed Differential Line Drivers |
National Semiconductor |
| 2159 |
5962-7802301MEA |
Quad High Speed Differential Line Drivers |
National Semiconductor |
| 2160 |
5962-7802301MFA |
Quad High Speed Differential Line Drivers |
National Semiconductor |
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