| No. |
Part Name |
Description |
Manufacturer |
| 2131 |
CSD794AR |
10.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB744AR |
Continental Device India Limited |
| 2132 |
CSD794AY |
10.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744AY |
Continental Device India Limited |
| 2133 |
CSD794O |
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB744O |
Continental Device India Limited |
| 2134 |
CSD794R |
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB744R |
Continental Device India Limited |
| 2135 |
CSD794Y |
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744Y |
Continental Device India Limited |
| 2136 |
CSD880 |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 300 hFE. Complementary CSB834 |
Continental Device India Limited |
| 2137 |
CSD880GR |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 150 - 300 hFE. Complementary CSB834GR |
Continental Device India Limited |
| 2138 |
CSD880O |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB834O |
Continental Device India Limited |
| 2139 |
CSD880Y |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB834Y |
Continental Device India Limited |
| 2140 |
CSD882 |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772 |
Continental Device India Limited |
| 2141 |
CSD882E |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E |
Continental Device India Limited |
| 2142 |
CSD882P |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P |
Continental Device India Limited |
| 2143 |
CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q |
Continental Device India Limited |
| 2144 |
CSD882R |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R |
Continental Device India Limited |
| 2145 |
CURRENT |
Photocoupler - Supplementary Information |
TOSHIBA |
| 2146 |
CXA1391Q |
Processing IC for Complementary Color Mosaic CCD Camera |
SONY |
| 2147 |
CXA1391Q/R |
Processing IC for Complementary Color Mosaic CCD |
SONY |
| 2148 |
CXA1391R |
Processing IC for Complementary Color Mosaic CCD Camera |
SONY |
| 2149 |
CXT3904NPN |
SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS |
Central Semiconductor |
| 2150 |
CXT3906PNP |
SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS |
Central Semiconductor |
| 2151 |
CZT305 |
2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR |
Central Semiconductor |
| 2152 |
CZT3055NPN |
2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR |
Central Semiconductor |
| 2153 |
CZT31C |
2.0W COMPLEMENTARY SILICON POWER TRANSISTOR |
Central Semiconductor |
| 2154 |
CZT32C |
2.0W COMPLEMENTARY SILICON POWER TRANSISTOR |
Central Semiconductor |
| 2155 |
CZT3904 |
COMPLEMENTARY SILICON TRANSISTORS |
Central Semiconductor |
| 2156 |
CZT3904NPN |
COMPLEMENTARY SILICON TRANSISTORS |
Central Semiconductor |
| 2157 |
CZT3906 |
COMPLEMENTARY SILICON TRANSISTORS |
Central Semiconductor |
| 2158 |
D...-CRCW |
Metal Glaze on High Quality Ceramic, Protective Over Glaze, SnPb Contacts on Ni Barrier Layer, Excellent Stability at Different Environmental Conditions, Suitable for Commercial and Special Applications |
Vishay |
| 2159 |
D..P/CRCW |
Metal Glaze on High Quality Ceramic, Protective Over Glaze, SnPb Contacts on Ni Barrier Layer, Excellent Stability at Different Environmental Conditions |
Vishay |
| 2160 |
D44C |
COMPLEMENTARY SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
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