| No. |
Part Name |
Description |
Manufacturer |
| 2131 |
SIR-568ST3F |
Sensors > Infrared Light Emitting Diodes |
ROHM |
| 2132 |
SIR-56ST3 |
Infrared light emitting diode/ top view type |
ROHM |
| 2133 |
SIR-56ST3F |
Sensors > Infrared Light Emitting Diodes |
ROHM |
| 2134 |
SIR341ST3F |
Infrared Light Emitting Diode / Top View Type |
ROHM |
| 2135 |
SR106C |
GaAsP Light Emitting Diode (RED) |
NEC |
| 2136 |
SR106CA |
GaAsP Light Emitting Diode RED |
NEC |
| 2137 |
SR106D |
GaAsP Light Emitting Diode (RED) |
NEC |
| 2138 |
TIL191 |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 2139 |
TIL191A |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 2140 |
TIL191B |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 2141 |
TIL192 |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 2142 |
TIL192A |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 2143 |
TIL192B |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 2144 |
TIL193 |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 2145 |
TIL193A |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 2146 |
TIL193B |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 2147 |
TIL318 |
P-N GALLIUM ARSENIDE INFRARED-EMITTING DIODES |
Texas Instruments |
| 2148 |
TIL31B |
P-N GALLIUM ARSENIDE INFRARED-EMITTING DIODES |
Texas Instruments |
| 2149 |
TIL33B |
P-N GALLIUM ARSENIDE INFRARED-EMITTING DIODES |
Texas Instruments |
| 2150 |
TIL34B |
P-N GALLIUM ARSENIDE INFRARED-EMITTING DIODES |
Texas Instruments |
| 2151 |
TLP580 |
(TLP581) GaAlAs Infrared Emitting Diode and NPN Silicon Photo Transistor |
TOSHIBA |
| 2152 |
TLR101 |
GaP Light-Emitting diode |
TOSHIBA |
| 2153 |
TLR102 |
GaP Light-Emitting diode |
TOSHIBA |
| 2154 |
TLR103 |
GaP Light-Emitting diode |
TOSHIBA |
| 2155 |
TLR104 |
GaP Light-Emitting diode, panel Circuit Indicator and Logic Circuit Condition Indicator |
TOSHIBA |
| 2156 |
TOX9000 |
1 V, gallium aluminum arsenide light emitting diode |
Texas Instruments |
| 2157 |
TOX9002 |
1 V, gallium aluminum arsenide light emitting diode |
Texas Instruments |
| 2158 |
TOX9004 |
3 V, gallium aluminum arsenide infrared-emitting diode |
Texas Instruments |
| 2159 |
TOX9005 |
2 V, P-N gallium arsenide infrared-emitting diode |
Texas Instruments |
| 2160 |
TOX9006 |
3 V, gallium aluminum arsenide infrared-emitting diode |
Texas Instruments |
| | | |
