| No. |
Part Name |
Description |
Manufacturer |
| 2131 |
BPX66 |
Photosilicon controlled switch |
Mullard |
| 2132 |
BR101 |
Silicon controlled switch |
Philips |
| 2133 |
BRX44 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 2134 |
BRX44 |
SILICON CONTROLLED RECTIFIER 0.8 AMP |
New Jersey Semiconductor |
| 2135 |
BRX45 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 2136 |
BRX45 |
SILICON CONTROLLED RECTIFIER 0.8 AMP |
New Jersey Semiconductor |
| 2137 |
BRX46 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 2138 |
BRX46 |
SILICON CONTROLLED RECTIFIER 0.8 AMP |
New Jersey Semiconductor |
| 2139 |
BRX47 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 2140 |
BRX47 |
SILICON CONTROLLED RECTIFIER 0.8 AMP |
New Jersey Semiconductor |
| 2141 |
BRX48 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 2142 |
BRX48 |
SILICON CONTROLLED RECTIFIER 0.8 AMP |
New Jersey Semiconductor |
| 2143 |
BRX49 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 2144 |
BRX49 |
SILICON CONTROLLED RECTIFIER 0.8 AMP |
New Jersey Semiconductor |
| 2145 |
BRY39 |
Programmable unijunction transistor/ Silicon controlled switch |
Philips |
| 2146 |
BRY62 |
Silicon controlled switch |
Philips |
| 2147 |
BSAK215MN |
βSAK215MN Pulse shaper circuits for revolution counters |
IPRS Baneasa |
| 2148 |
BSAK215N |
βSAK215N Pulse shaper circuits for revolution counters |
IPRS Baneasa |
| 2149 |
BSAK215VN |
βSAK215VN Pulse shaper circuits for revolution counters |
IPRS Baneasa |
| 2150 |
BSV69 |
Silicon NPN epitaxial planar transistor for switching applications in core drivers |
AEG-TELEFUNKEN |
| 2151 |
BT151 |
600V Vdrm 12A Sensitive Gate Silicon Controlled Rectifier, 1.7@23AV Peak On-State Voltage, 200V/μs Rise of Off-State Voltage |
SemiWell Semiconductor |
| 2152 |
BT151F |
600V Vdrm 12A Sensitive Gate Silicon Controlled Rectifier, 1.7@23AV Peak On-State Voltage, 200V/μs Rise of Off-State Voltage |
SemiWell Semiconductor |
| 2153 |
BT152 |
600V Vdrm 20A Sensitive Gate Silicon Controlled Rectifier, 1.7@40AV Peak On-State Voltage, 200V/μs Rise of Off-State Voltage |
SemiWell Semiconductor |
| 2154 |
BT152F |
600V Vdrm 20A Sensitive Gate Silicon Controlled Rectifier, 1.7@40AV Peak On-State Voltage, 200V/μs Rise of Off-State Voltage |
SemiWell Semiconductor |
| 2155 |
BU204 |
NPN silicon power transistor. Horizontal deflection output stages of large screen colour deflection circuits. 2.5Amp, 1300V, 36Watt. |
USHA India LTD |
| 2156 |
BU205 |
NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vcex = 1500Vdc, Veb = 5Vdc, Ic = 2.5Adc, PD = 36W. |
USHA India LTD |
| 2157 |
BU208 |
NPN silicon power high-voltage transistor designed for use in colour televisions |
Motorola |
| 2158 |
BU208 |
NPN silicon power transistor. Horizontal deflection output stages of large screen colour deflection circuits. 5Amp, 1300V, 12.5Watt. |
USHA India LTD |
| 2159 |
BU209 |
NPN silicon power high-voltage transistor designed for use in colour televisions |
Motorola |
| 2160 |
BU209A |
NPN silicon power high-voltage transistor designed for use in colour televisions |
Motorola |
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