| No. |
Part Name |
Description |
Manufacturer |
| 2131 |
2SB503 |
Silicon PNP epitaxial MESA transistor, audio power amplifier, regulator applications |
TOSHIBA |
| 2132 |
2SB507 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 2133 |
2SB507D |
PLANAR TYPE SILICON TRANSISTOR FOR AF POWER AMPLIFIER USE |
SANYO |
| 2134 |
2SB508 |
PLANAR TYPE SILICON TRANSISTOR FOR AF POWER AMPLIFIER USE |
SANYO |
| 2135 |
2SB509 |
For AF Power Amplifier Use |
Unknow |
| 2136 |
2SB514 |
PNP Triple Diffused Planar Silicon Transistors 50V/2A Low-Frequency Power Amplifier Applications |
SANYO |
| 2137 |
2SB536 |
Audio Frequency power amplifier and low speed switching silicon epitaxial transistor |
NEC |
| 2138 |
2SB536 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
| 2139 |
2SB537 |
Audio Frequency power amplifier and low speed switching silicon epitaxial transistor |
NEC |
| 2140 |
2SB537 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
| 2141 |
2SB539A |
Audio frequency power amplifier silicon triple diffused MESA transistor |
NEC |
| 2142 |
2SB539B |
Audio frequency power amplifier silicon triple diffused MESA transistor |
NEC |
| 2143 |
2SB539C |
Audio frequency power amplifier silicon triple diffused MESA transistor |
NEC |
| 2144 |
2SB541 |
Audio frequency power amplifier PNP/NPN silicon triple diffused MESA transistor |
NEC |
| 2145 |
2SB548 |
PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
NEC |
| 2146 |
2SB548 |
Audio Frequency Power Amplifier |
Unknow |
| 2147 |
2SB554 |
Power Amplifier Applications |
TOSHIBA |
| 2148 |
2SB56 |
Germanium PNP alloy junction transistor, audio low power amplifier applications |
TOSHIBA |
| 2149 |
2SB561 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2150 |
2SB562 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2151 |
2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A. |
USHA India LTD |
| 2152 |
2SB595 |
Silicon PNP triple diffused power amplifier |
TOSHIBA |
| 2153 |
2SB595 |
LOW FREQUENCY POWER AMPLIFIER(PNP EPITAXUAL) |
Wing Shing Computer Components |
| 2154 |
2SB596 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 2155 |
2SB600 |
Audio frequency power amplifier silicon triple diffused transistor |
NEC |
| 2156 |
2SB621 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 2157 |
2SB621A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 2158 |
2SB624 |
AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 2159 |
2SB624R |
PNP silicon epitaxial transistor designed for use in audio frequency power amplifiers |
NEC |
| 2160 |
2SB628 |
Silicon epitaxial transistor, audio frequency power amplifier and low speed switching |
NEC |
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