| No. |
Part Name |
Description |
Manufacturer |
| 2161 |
1N758A |
Silicon Power Zener Diodes |
Vishay |
| 2162 |
1N759A |
Silicon Power Zener Diodes |
Vishay |
| 2163 |
1NH41 |
FAST RECOVERY RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 2164 |
1NH42 |
FAST RECOVERY RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 2165 |
1R5DL41A |
High Efficiency Rectifier (HED) Switching Mode Power Supply Applications |
TOSHIBA |
| 2166 |
1R5DU41 |
SUPER FAST RECOVERY RECTIFIER (SWITCHING TYPE POWER SUPPLY APPLICATIONS) |
TOSHIBA |
| 2167 |
1R5GH45 |
FAST RECOVERY RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 2168 |
1R5GU41 |
DUPER FAST RECOVERY RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 2169 |
1R5JH45 |
FAST RECOVERY RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 2170 |
1R5NH41 |
FAST RECOVERY RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 2171 |
1R5NH45 |
FAST RECOVERY RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 2172 |
1R5NU41 |
SUPER FAST RECOVERY RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 2173 |
1S1472 |
Radio & TV power supply silicon rectifier |
TOSHIBA |
| 2174 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2175 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2176 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2177 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2178 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2179 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2180 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2181 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2182 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2183 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2184 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2185 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2186 |
1S5015 |
Silicon power zener diode 10W 15V |
Texas Instruments |
| 2187 |
1S5015A |
Silicon power zener diode 10W 15V, ±5% tolerance |
Texas Instruments |
| 2188 |
1S5015C |
Silicon power zener diode 10W 15V, double anode |
Texas Instruments |
| 2189 |
1S5015R |
Silicon power zener diode 10W 15V, reverse polarity |
Texas Instruments |
| 2190 |
1S5016 |
Silicon power zener diode 10W 16V |
Texas Instruments |
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