| No. |
Part Name |
Description |
Manufacturer |
| 2161 |
PSMN4R6-100XS |
N-channel 100V 4.6 mΩ standard level MOSFET in TO220F (SOT186A) |
NXP Semiconductors |
| 2162 |
PSMN5R0-100XS |
N-channel 100V 5 mΩ standard level MOSFET in TO220F (SOT186A) |
Nexperia |
| 2163 |
PSMN5R0-100XS |
N-channel 100V 5 mΩ standard level MOSFET in TO220F (SOT186A) |
NXP Semiconductors |
| 2164 |
PSMN5R6-100XS |
N-channel 100V 5.6 mΩ standard level MOSFET in TO220F (SOT186A) |
Nexperia |
| 2165 |
PSMN5R6-100XS |
N-channel 100V 5.6 mΩ standard level MOSFET in TO220F (SOT186A) |
NXP Semiconductors |
| 2166 |
PSMN7R0-100XS |
N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A) |
Nexperia |
| 2167 |
PSMN7R0-100XS |
N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A) |
NXP Semiconductors |
| 2168 |
PSMN8R5-100XS |
N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A) |
NXP Semiconductors |
| 2169 |
PSMN9R5-100XS |
N-channel 100V 9.6 mΩ standard level MOSFET in TO220F (SOT186A) |
NXP Semiconductors |
| 2170 |
QSB320F |
SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR |
Fairchild Semiconductor |
| 2171 |
QSB320FTR |
Surface Mount Silicon Infrared Phototransistor |
Fairchild Semiconductor |
| 2172 |
R6020FNJ |
Nch 600V 20A Power MOSFET |
ROHM |
| 2173 |
R6020FNJTL |
Nch 600V 20A Power MOSFET |
ROHM |
| 2174 |
R6020FNX |
10V Drive Nch MOSFET |
ROHM |
| 2175 |
RD0506LS-SB |
Planar Ultrafast Rectifier 5A, 600V, TO-220F-2FS |
ON Semiconductor |
| 2176 |
RD120FM |
Zener diode 1 W 2-pin power mini mold |
NEC |
| 2177 |
RD20F |
ZENER DIODES 1 W DO-41 GLASS SEALED PACKAGE |
NEC |
| 2178 |
RD20F-T6 |
Constant Voltage diode 1W DO-41 |
NEC |
| 2179 |
RD20F-T7 |
Constant Voltage diode 1W DO-41 |
NEC |
| 2180 |
RD20F-T8 |
Constant Voltage diode 1W DO-41 |
NEC |
| 2181 |
RD20FM |
Constant Voltage diode 1W 2pin power mini mold |
NEC |
| 2182 |
RM200DA-20F |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2183 |
RM200DA-20F |
Fast Recovery Diode Modules, F Series (for Bipolar speed switching) |
Mitsubishi Electric Corporation |
| 2184 |
RM200HA-20F |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2185 |
S5420F |
DUAL 4-Input positive NAND gate |
Signetics |
| 2186 |
S54H20F |
Dual 4-Input positive NAND gate |
Signetics |
| 2187 |
S54S20F |
Dual 4-input positive NAND gate |
Signetics |
| 2188 |
S8T20F |
Bidirectional one shot |
Signetics |
| 2189 |
SA120FA60 |
600V Fast Recovery Diode in a SOT-227 package |
International Rectifier |
| 2190 |
SAF-XC161CJ-16F20F AC |
High End Microcontroller with CAN & J1850 Interface |
Infineon |
| | | |
