No. |
Part Name |
Description |
Manufacturer |
2161 |
2SB509 |
For AF Power Amplifier Use |
Unknow |
2162 |
2SB514 |
PNP Triple Diffused Planar Silicon Transistors 50V/2A Low-Frequency Power Amplifier Applications |
SANYO |
2163 |
2SB536 |
Audio Frequency power amplifier and low speed switching silicon epitaxial transistor |
NEC |
2164 |
2SB536 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
2165 |
2SB537 |
Audio Frequency power amplifier and low speed switching silicon epitaxial transistor |
NEC |
2166 |
2SB537 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
2167 |
2SB539A |
Audio frequency power amplifier silicon triple diffused MESA transistor |
NEC |
2168 |
2SB539B |
Audio frequency power amplifier silicon triple diffused MESA transistor |
NEC |
2169 |
2SB539C |
Audio frequency power amplifier silicon triple diffused MESA transistor |
NEC |
2170 |
2SB541 |
Audio frequency power amplifier PNP/NPN silicon triple diffused MESA transistor |
NEC |
2171 |
2SB548 |
PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
NEC |
2172 |
2SB548 |
Audio Frequency Power Amplifier |
Unknow |
2173 |
2SB554 |
Power Amplifier Applications |
TOSHIBA |
2174 |
2SB56 |
Germanium PNP alloy junction transistor, audio low power amplifier applications |
TOSHIBA |
2175 |
2SB561 |
Transistors>Amplifiers/Bipolar |
Renesas |
2176 |
2SB562 |
Transistors>Amplifiers/Bipolar |
Renesas |
2177 |
2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A. |
USHA India LTD |
2178 |
2SB595 |
Silicon PNP triple diffused power amplifier |
TOSHIBA |
2179 |
2SB595 |
LOW FREQUENCY POWER AMPLIFIER(PNP EPITAXUAL) |
Wing Shing Computer Components |
2180 |
2SB596 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
2181 |
2SB600 |
Audio frequency power amplifier silicon triple diffused transistor |
NEC |
2182 |
2SB621 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
2183 |
2SB621A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
2184 |
2SB624 |
AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
2185 |
2SB624R |
PNP silicon epitaxial transistor designed for use in audio frequency power amplifiers |
NEC |
2186 |
2SB628 |
Silicon epitaxial transistor, audio frequency power amplifier and low speed switching |
NEC |
2187 |
2SB631 |
PNP Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications |
SANYO |
2188 |
2SB631K |
PNP Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications |
SANYO |
2189 |
2SB632 |
PNP Epitaxial Planar Silicon Transistor 25V/35V, 2A Low-Frequency Power Amplifier Applications |
SANYO |
2190 |
2SB632K |
PNP Epitaxial Planar Silicon Transistor 25V/35V, 2A Low-Frequency Power Amplifier Applications |
SANYO |
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