| No. |
Part Name |
Description |
Manufacturer |
| 2161 |
2N5190 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2162 |
2N5191 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2163 |
2N5192 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2164 |
2N5193 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2165 |
2N5194 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2166 |
2N5195 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2167 |
2N5224 |
General Purpose NPN Silicon Low-level Switching transistor |
ITT Semiconductors |
| 2168 |
2N5228 |
General purpose PNP silicon low-level switching transistor |
ITT Semiconductors |
| 2169 |
2N5262 |
Silicon NPN High-Speed Switching Transistor |
RCA Solid State |
| 2170 |
2N5294 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 2171 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 2172 |
2N5302 |
NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) |
Wing Shing Computer Components |
| 2173 |
2N5320 |
SWITCHING TRANSISTORS (NPN SILICON) |
Boca Semiconductor Corporation |
| 2174 |
2N5320 |
10.000W Switching NPN Metal Can Transistor. 75V Vceo, 2.000A Ic, 30 - 130 hFE. |
Continental Device India Limited |
| 2175 |
2N5321 |
SWITCHING TRANSISTORS (NPN SILICON) |
Boca Semiconductor Corporation |
| 2176 |
2N5321 |
10.000W Switching NPN Metal Can Transistor. 50V Vceo, 2.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
| 2177 |
2N5322 |
SWITCHING TRANSISTORS (PNP SILICON) |
Boca Semiconductor Corporation |
| 2178 |
2N5323 |
SWITCHING TRANSISTORS (PNP SILICON) |
Boca Semiconductor Corporation |
| 2179 |
2N5336 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 2180 |
2N5336 |
Planar transistor for switching applications |
SGS-ATES |
| 2181 |
2N5337 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 2182 |
2N5338 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 2183 |
2N5338 |
Planar transistor for switching applications |
SGS-ATES |
| 2184 |
2N5339 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 2185 |
2N5339 |
Planar transistor for switching applications |
SGS-ATES |
| 2186 |
2N5357 |
PNP silicon switching transistor, TO-37 case |
Motorola |
| 2187 |
2N5415 |
PNP switching transistor - metal case, high power |
IPRS Baneasa |
| 2188 |
2N5416 |
PNP switching transistor - metal case, high power |
IPRS Baneasa |
| 2189 |
2N5435 |
PNP germanium power switching transistor |
Motorola |
| 2190 |
2N5436 |
PNP germanium power switching transistor |
Motorola |
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