| No. |
Part Name |
Description |
Manufacturer |
| 2161 |
VI-FKE6-CUX |
Single or Three Phase Strappable |
Vicor Corporation |
| 2162 |
VI-FPE6 |
Single or Three Phase Strappable |
Vicor Corporation |
| 2163 |
VI-FPE6-CMX |
Single or Three Phase Strappable |
Vicor Corporation |
| 2164 |
VI-FPE6-CQX |
Single or Three Phase Strappable |
Vicor Corporation |
| 2165 |
VI-FPE6-CUX |
Single or Three Phase Strappable |
Vicor Corporation |
| 2166 |
VI-TKY6-CEX |
Single or Three Phase Strappable |
Vicor Corporation |
| 2167 |
VI-TKY6-CHX |
Single or Three Phase Strappable |
Vicor Corporation |
| 2168 |
VI-TRY6-CCX |
Single or Three Phase Strappable |
Vicor Corporation |
| 2169 |
ZSA5MA27 |
High transient reverse power capability suitable for protecting automobile electronic components etc. |
Hitachi Semiconductor |
| 2170 |
ZXFBF05 |
4 Channel Buffer Device with high capacitance load capability |
Zetex Semiconductors |
| 2171 |
ZXMN2088DE6 |
20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET WITH LOW GATE DRIVE CAPABILITY |
Diodes |
| 2172 |
ZXMN2088DE6TA |
20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET WITH LOW GATE DRIVE CAPABILITY |
Diodes |
| 2173 |
ZXMN2B01F |
20V N-CHANNEL ENHANCEMENT MODE MOSFET WITH LOW GATE DRIVE CAPABILITY |
Diodes |
| 2174 |
ZXMN2B01FTA |
20V N-CHANNEL ENHANCEMENT MODE MOSFET WITH LOW GATE DRIVE CAPABILITY |
Diodes |
| 2175 |
ZXMN2B03E6 |
20V N-CHANNEL ENHANCEMENT MODE MOSFET WITH LOW GATE DRIVE CAPABILITY |
Diodes |
| 2176 |
ZXMN2B03E6TA |
20V N-CHANNEL ENHANCEMENT MODE MOSFET WITH LOW GATE DRIVE CAPABILITY |
Diodes |
| 2177 |
ZXMN2B14FH |
20V N-CHANNEL ENHANCEMENT MODE MOSFET WITH LOW GATE DRIVE CAPABILITY |
Diodes |
| 2178 |
ZXMN2B14FHTA |
20V N-CHANNEL ENHANCEMENT MODE MOSFET WITH LOW GATE DRIVE CAPABILITY |
Diodes |
| | | |
