| No. |
Part Name |
Description |
Manufacturer |
| 21661 |
HMBD2004C |
General purpose diodes fabricated in planar tehnology |
Hi-Sincerity Microelectronics |
| 21662 |
HMBD2004S |
General purpose diodes fabricated in planar tehnology |
Hi-Sincerity Microelectronics |
| 21663 |
HMBT5551 |
NPN EPITAXIAL PLANAR TRANSISTOR(for general purpose applications requiring high Breakdown Voltages ) |
Hi-Sincerity Microelectronics |
| 21664 |
HMC308 |
GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz |
Hittite Microwave Corporation |
| 21665 |
HMPP-3860 |
HMPP-3860 · Low cost general purpose PIN diode |
Agilent (Hewlett-Packard) |
| 21666 |
HMPP-3862 |
HMPP-3862 · Low cost general purpose PIN diode |
Agilent (Hewlett-Packard) |
| 21667 |
HMPP-3865 |
HMPP-3865 · Low cost general purpose PIN diode |
Agilent (Hewlett-Packard) |
| 21668 |
HN1A01F |
Transistor Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 21669 |
HN1A01FU |
Transistor Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 21670 |
HN1B01F |
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 21671 |
HN1B01FDW1T1 |
Complementary Dual General Purpose Amplifier Transistor |
ON Semiconductor |
| 21672 |
HN1B01FDW1T1-D |
Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount |
ON Semiconductor |
| 21673 |
HN1B01FU |
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 21674 |
HN1B04FU |
Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 21675 |
HN1C01F |
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 21676 |
HN1C01FU |
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 21677 |
HN2A01FU |
Transistor Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 21678 |
HN2C01FU |
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 21679 |
HN3B01F |
PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 21680 |
HN3B02FU |
Transistor Silicon PNP�NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 21681 |
HN4C05JU |
Multi Chip Discrete Device Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications |
TOSHIBA |
| 21682 |
HN5400 |
PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 21683 |
HN5401 |
PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 21684 |
HN5550 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 21685 |
HN5551 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 21686 |
HPH2369 |
Emitter to base voltage:4.5V 500mA NPN epitaxial planar transistor for general purpose switching and amplifier applications |
Hi-Sincerity Microelectronics |
| 21687 |
HSMP-3830 |
HSMP-3830 · General purpose PIN diode |
Agilent (Hewlett-Packard) |
| 21688 |
HSMP-3832 |
HSMP-3832 · General purpose PIN diode |
Agilent (Hewlett-Packard) |
| 21689 |
HSMP-3833 |
HSMP-3833 · General purpose PIN diode |
Agilent (Hewlett-Packard) |
| 21690 |
HSMP-3834 |
HSMP-3834 · General purpose PIN diode |
Agilent (Hewlett-Packard) |
| | | |
