| No. |
Part Name |
Description |
Manufacturer |
| 2191 |
2SC730 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2192 |
2SC741 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2193 |
2SC908 |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
| 2194 |
2SC982 |
Silicon NPN epitaxial planar transistor, Printer Drive, Core Drive and LED drive, low frequency amplifier applications |
TOSHIBA |
| 2195 |
2SC982 |
NPN EPITAXIAL TYPE (PRINTER DRIVE/ CORE DRIVER AND LED DRIVE/ LOW FREQUENCY AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 2196 |
2SC982TM |
Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington) Printer Drive, Core Drive and LED Drive Applications Low Frequency Amplifier Applications |
TOSHIBA |
| 2197 |
2SD1447 |
900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SB1035 |
Isahaya Electronics Corporation |
| 2198 |
2SD1972 |
2W Lead frame NPN transistor, maximum rating: 60V Vceo, 3A Ic, 250 to 800 hFE. |
Isahaya Electronics Corporation |
| 2199 |
2SJ125 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -1 to -12 mA Idss. |
Isahaya Electronics Corporation |
| 2200 |
2SJ145 |
FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE |
Isahaya Electronics Corporation |
| 2201 |
2SJ498 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -0.6 to -12 mA Idss. |
Isahaya Electronics Corporation |
| 2202 |
2SK105 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
| 2203 |
2SK113 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
| 2204 |
2SK152 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
| 2205 |
2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss. |
Isahaya Electronics Corporation |
| 2206 |
2SK2881 |
For Low Frequency Amplify Application N Channel Junction type Micro(Frame type) |
Isahaya Electronics Corporation |
| 2207 |
2SK2973 |
MITSUBISHI RF POWER MOS FET |
Mitsubishi Electric Corporation |
| 2208 |
2SK2974 |
MITSUBISHI RF POWER MOS FET |
Mitsubishi Electric Corporation |
| 2209 |
2SK2975 |
MITSUBISHI RF POWER MOS FET |
Mitsubishi Electric Corporation |
| 2210 |
2SK363 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
| 2211 |
2SK433 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.6to 12 mA Idss. |
Isahaya Electronics Corporation |
| 2212 |
2SK492 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 1 to 12 mA Idss. |
Isahaya Electronics Corporation |
| 2213 |
2SK930 |
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE |
Isahaya Electronics Corporation |
| 2214 |
2W005G |
SINTERED GLASS PASSIVATED BRIDGE RECTIFIER |
Zowie Technology Corporation |
| 2215 |
2W01G |
SINTERED GLASS PASSIVATED BRIDGE RECTIFIER |
Zowie Technology Corporation |
| 2216 |
2W02G |
SINTERED GLASS PASSIVATED BRIDGE RECTIFIER |
Zowie Technology Corporation |
| 2217 |
2W04G |
SINTERED GLASS PASSIVATED BRIDGE RECTIFIER |
Zowie Technology Corporation |
| 2218 |
2W06G |
SINTERED GLASS PASSIVATED BRIDGE RECTIFIER |
Zowie Technology Corporation |
| 2219 |
2W08G |
SINTERED GLASS PASSIVATED BRIDGE RECTIFIER |
Zowie Technology Corporation |
| 2220 |
2W10G |
SINTERED GLASS PASSIVATED BRIDGE RECTIFIER |
Zowie Technology Corporation |
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