| No. |
Part Name |
Description |
Manufacturer |
| 2191 |
BFQ23C |
Silicon planar epitaxial gold-metallized PNP transistor in a sub-miniature HERMETICALLY SEALED micro-stripline envelope |
Philips |
| 2192 |
BFR91A |
NPN silicon planar epitaxial transistor for use in UHF and microwave amplifiers, low noise, high power gain, gold metallization |
Philips |
| 2193 |
BFW92 |
NPN high-frequency transistor, low noise over a wide current range, very high power gain and good intermodulation |
Philips |
| 2194 |
BKC2000 |
15 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 2195 |
BQ24022 |
bqTINY-II 1-Cell Li-Ion Charger w/USB/AC Supply Mgmt in 3x3mm2 QFN-10 w/Enable, Power Good |
Texas Instruments |
| 2196 |
BQ24022DRCR |
bqTINY-II 1-Cell Li-Ion Charger w/USB/AC Supply Mgmt in 3x3mm2 QFN-10 w/Enable, Power Good |
Texas Instruments |
| 2197 |
BQ24022DRCRG4 |
bqTINY-II 1-Cell Li-Ion Charger w/USB/AC Supply Mgmt in 3x3mm2 QFN-10 w/Enable, Power Good |
Texas Instruments |
| 2198 |
CFY25 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 2199 |
CFY25-17 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 2200 |
CFY25-20 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 2201 |
CFY25-23 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 2202 |
CGY52 |
GaAs MMIC (Two stages monolithic microwave IC MMICAmplifier All gold metallisation) |
Siemens |
| 2203 |
CM3102 |
Micropower, 1.2V/150mA CMOS LDO Regulator with Power Good |
California Micro Devices Corp |
| 2204 |
CM3102-12SO |
Micropower, 1.2V/150mA CMOS LDO Regulator with Power Good |
California Micro Devices Corp |
| 2205 |
CM3102-12ST |
Micropower, 1.2V/150mA CMOS LDO Regulator with Power Good |
California Micro Devices Corp |
| 2206 |
CM3112 |
150mA/1.2V CMOS LDO Regulator with Power Good |
California Micro Devices Corp |
| 2207 |
CM3112-12SO |
150mA/1.2V CMOS LDO Regulator with Power Good |
California Micro Devices Corp |
| 2208 |
CM3112-12ST |
150mA/1.2V CMOS LDO Regulator with Power Good |
California Micro Devices Corp |
| 2209 |
CS5166-D |
5-Bit Synchronous CPU Controller with Power Good and Current Limit |
ON Semiconductor |
| 2210 |
CS5166H-D |
5-Bit Synchronous CPU Controller with Power Good and Current Limit |
ON Semiconductor |
| 2211 |
CS5301 |
Three-Phase Buck Controller with Integrated Gate Drivers and Power Good |
ON Semiconductor |
| 2212 |
CS5301-D |
Three-Phase Buck Controller with Integrated Gate Drivers and Power Good |
ON Semiconductor |
| 2213 |
CS5301GDW32 |
Three-Phase Buck Controller with Integrated Gate Drivers and Power Good |
ON Semiconductor |
| 2214 |
CS5301GDWR32 |
Three-Phase Buck Controller with Integrated Gate Drivers and Power Good |
ON Semiconductor |
| 2215 |
CWR06 |
Solid Tantalum Chip Capacitors, Conformal, MIDGET® Solid-Electrolyte Military, MIL-C-55365/4 Qualified, Minimum Size, Tape and Reel Packaging, Gold Plate, 60/40 Electroplate, or Hot Solder Dipped Terminations Available |
Vishay |
| 2216 |
CXA1635 |
STEREO PRE-AMPLIFIER/POWER-AMPLIGIER WITH 3V GOVERNOR |
SONY |
| 2217 |
CXA1635M |
STEREO PRE-AMPLIFIER/POWER-AMPLIGIER WITH 3V GOVERNOR |
SONY |
| 2218 |
CXA1635S |
STEREO PRE-AMPLIFIER/POWER-AMPLIGIER WITH 3V GOVERNOR |
SONY |
| 2219 |
DFP14 |
Military, Hot Solder Dip or Gold Plated Leads, Highly Stable, Passes MIL-STD-202 Method 210, Condition E ""Resistance to Soldering Heat"" Test |
Vishay |
| 2220 |
DFP16 |
Military, Hot Solder Dip or Gold Plated Leads, Highly Stable, Passes MIL-STD-202 Method 210, Condition E ""Resistance to Soldering Heat"" Test |
Vishay |
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