| No. |
Part Name |
Description |
Manufacturer |
| 2191 |
2SC2230 |
Transistor Silicon NPN Triple Diffused Type (PCT Process) HIGH VOLTAGE GENERAL AMPLIFIER AND COLOR TV CLASS B SOUND OUTPUT APPLICATIONS |
TOSHIBA |
| 2192 |
2SC2230A |
Transistor Silicon NPN Triple Diffused Type (PCT Process) HIGH VOLTAGE GENERAL AMPLIFIER AND COLOR TV CLASS B SOUND OUTPUT APPLICATIONS |
TOSHIBA |
| 2193 |
2SC2258A |
Si NPN triple diffused planar. High voltage general amplifier. |
Panasonic |
| 2194 |
2SC2258B |
Si NPN triple diffused planar. High voltage general amplifier. |
Panasonic |
| 2195 |
2SC2267 |
SILICON NPN TRIPLE DIFFUSED HIGH VOLTAGE SWITCHING |
Hitachi Semiconductor |
| 2196 |
2SC2278 |
HIGH FREQUENCY HIGH VOLTAGE AMPLIFIER TV VIDEO OUTPUT |
Hitachi Semiconductor |
| 2197 |
2SC2295 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 2198 |
2SC2318 |
Silicon NPN epitaxial planar high-power for CATV transistor |
TOSHIBA |
| 2199 |
2SC2337 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 2200 |
2SC2337 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 2201 |
2SC2337A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 2202 |
2SC2337A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 2203 |
2SC2344 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications |
SANYO |
| 2204 |
2SC2350 |
NPN silicon epitaxial transistor, high frequency low noise amplifier |
NEC |
| 2205 |
2SC2352 |
Typical application of 2SC2352 to VHF Tuner mixer circuit of high conversion Gain - application note |
NEC |
| 2206 |
2SC2356 |
SILICON HIGH SPEED TRIPLE DIFFUSED NPN POWER TRANSISTOR 10 AMP,400 VOLT |
Fujitsu Microelectronics |
| 2207 |
2SC2367 |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
NEC |
| 2208 |
2SC2369 |
NPN SILICON HIGH FREQUNY TRANSISTOR |
NEC |
| 2209 |
2SC2377 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 2210 |
2SC2404 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 2211 |
2SC2414 |
Si NPN triple diffused mesa . High speed power switching. |
Panasonic |
| 2212 |
2SC2428 |
Silicon High Speed Power NPN Transistor |
Fujitsu Microelectronics |
| 2213 |
2SC2429 |
SILICON HIGH SPPED POWER TRANSISTORS |
Fujitsu Microelectronics |
| 2214 |
2SC2429A |
Silicon High Speed Power NPN Transistor |
Fujitsu Microelectronics |
| 2215 |
2SC2429A |
Silicon High Speed Power Transistor |
Fujitsu Microelectronics |
| 2216 |
2SC2431 |
Silicon High Speed Power Transistor |
Fujitsu Microelectronics |
| 2217 |
2SC2432 |
Silicon High Speed Power Transistor |
Fujitsu Microelectronics |
| 2218 |
2SC2433 |
Silicon High Speed Power Transistor |
Fujitsu Microelectronics |
| 2219 |
2SC2434 |
Silicon High Speed Power Transistor |
Fujitsu Microelectronics |
| 2220 |
2SC2437 |
SUPER HIGH SPEED SWITCHING TRANSISTORS |
COLLMER SEMICONDUCTOR INC |
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