| No. |
Part Name |
Description |
Manufacturer |
| 2191 |
2N5375 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2192 |
2N5376 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2193 |
2N5377 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2194 |
2N5381 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2195 |
2N5383 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2196 |
2N5400 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2197 |
2N5400 |
Silicon PNP epitaxial transistor (PCT Process) |
TOSHIBA |
| 2198 |
2N5401 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2199 |
2N5401 |
Silicon PNP epitaxial transistor (PCT Process) |
TOSHIBA |
| 2200 |
2N5415 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2201 |
2N5415CSM4 |
PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2202 |
2N5416 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2203 |
2N5416CSM4 |
PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2204 |
2N5441 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. |
Motorola |
| 2205 |
2N5442 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
| 2206 |
2N5443 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
| 2207 |
2N5444 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. |
Motorola |
| 2208 |
2N5445 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
| 2209 |
2N5446 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
| 2210 |
2N5447 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2211 |
2N5448 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2212 |
2N5449 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2213 |
2N5550 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2214 |
2N5550 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
| 2215 |
2N5551 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2216 |
2N5551 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
| 2217 |
2N5567 |
BIDIRECTIONAL TRIODE THYRISTORS |
Motorola |
| 2218 |
2N5568 |
BIDIRECTIONAL TRIODE THYRISTORS |
Motorola |
| 2219 |
2N5569 |
BIDIRECTIONAL TRIODE THYRISTORS |
Motorola |
| 2220 |
2N5570 |
BIDIRECTIONAL TRIODE THYRISTORS |
Motorola |
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