No. |
Part Name |
Description |
Manufacturer |
2191 |
2SB435 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
2192 |
2SB439 |
Germanium PNP alloy junction transistor, low noise amplifier applications |
TOSHIBA |
2193 |
2SB440 |
Germanium PNP alloy junction transistor, low noise amplifier applications |
TOSHIBA |
2194 |
2SB459 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
2195 |
2SB460 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
2196 |
2SB461 |
Germanium PNP alloy junction transistor, audio medium power amplifier, strobo flash applications |
TOSHIBA |
2197 |
2SB502 |
Silicon PNP epitaxial MESA transistor, audio power amplifier, regulator applications |
TOSHIBA |
2198 |
2SB503 |
Silicon PNP epitaxial MESA transistor, audio power amplifier, regulator applications |
TOSHIBA |
2199 |
2SB507 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
2200 |
2SB507D |
PLANAR TYPE SILICON TRANSISTOR FOR AF POWER AMPLIFIER USE |
SANYO |
2201 |
2SB508 |
PLANAR TYPE SILICON TRANSISTOR FOR AF POWER AMPLIFIER USE |
SANYO |
2202 |
2SB509 |
For AF Power Amplifier Use |
Unknow |
2203 |
2SB514 |
PNP Triple Diffused Planar Silicon Transistors 50V/2A Low-Frequency Power Amplifier Applications |
SANYO |
2204 |
2SB536 |
Audio Frequency power amplifier and low speed switching silicon epitaxial transistor |
NEC |
2205 |
2SB536 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
2206 |
2SB537 |
Audio Frequency power amplifier and low speed switching silicon epitaxial transistor |
NEC |
2207 |
2SB537 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
2208 |
2SB539A |
Audio frequency power amplifier silicon triple diffused MESA transistor |
NEC |
2209 |
2SB539B |
Audio frequency power amplifier silicon triple diffused MESA transistor |
NEC |
2210 |
2SB539C |
Audio frequency power amplifier silicon triple diffused MESA transistor |
NEC |
2211 |
2SB541 |
Audio frequency power amplifier PNP/NPN silicon triple diffused MESA transistor |
NEC |
2212 |
2SB548 |
PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
NEC |
2213 |
2SB548 |
Audio Frequency Power Amplifier |
Unknow |
2214 |
2SB554 |
Power Amplifier Applications |
TOSHIBA |
2215 |
2SB56 |
Germanium PNP alloy junction transistor, audio low power amplifier applications |
TOSHIBA |
2216 |
2SB561 |
Transistors>Amplifiers/Bipolar |
Renesas |
2217 |
2SB562 |
Transistors>Amplifiers/Bipolar |
Renesas |
2218 |
2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A. |
USHA India LTD |
2219 |
2SB595 |
Silicon PNP triple diffused power amplifier |
TOSHIBA |
2220 |
2SB595 |
LOW FREQUENCY POWER AMPLIFIER(PNP EPITAXUAL) |
Wing Shing Computer Components |
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