| No. |
Part Name |
Description |
Manufacturer |
| 2191 |
JS1F-B-6V |
ULTRA-MINIATURE PC BOARD TYPE POWER RELAY |
Matsushita Electric Works(Nais) |
| 2192 |
JS1F-B-9V |
ULTRA-MINIATURE PC BOARD TYPE POWER RELAY |
Matsushita Electric Works(Nais) |
| 2193 |
K4D26323RA-GC |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Data Sheet |
Samsung Electronic |
| 2194 |
K4D26323RA-GC2A |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
| 2195 |
K4D26323RA-GC33 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
| 2196 |
K4D26323RA-GC36 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
| 2197 |
KM-4457F3C |
1.5mm SIDE LOOK INFRA-RED ENITTING DIODE |
Kingbright Electronic |
| 2198 |
KM7101 |
Ultra-Low Cost, 136uA, 4.9MHz Rail-to-Rail I/O Amplifier |
Fairchild Semiconductor |
| 2199 |
KM7101IT5 |
Ultra-Low Cost, 139A, +2.7V, 4.9MHz Rail-to-Rail I/O Amplifier |
Fairchild Semiconductor |
| 2200 |
KTK5132 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH) |
Korea Electronics (KEC) |
| 2201 |
KTK5162 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH) |
Korea Electronics (KEC) |
| 2202 |
L-34F3BT |
T-1 (3mm) INFRA-RED EMITTING DIODE |
Kingbright Electronic |
| 2203 |
L-34F3C |
INFRA-RED EMITTIMG DIODES |
Kingbright Electronic |
| 2204 |
L34F3C |
T-1 INFRA-RED EMITTING DIODES |
Kingbright Electronic |
| 2205 |
L34SF4BT |
T-1 INFRA-RED EMITTING DIODES |
Kingbright Electronic |
| 2206 |
L34SF4C |
T-1 INFRA-RED EMITTING DIODES |
Kingbright Electronic |
| 2207 |
LM15851 |
12-Bit, Ultra-wideband RF sampling subsystem 68-VQFN -40 to 85 |
Texas Instruments |
| 2208 |
LM15851NKE |
12-Bit, Ultra-wideband RF sampling subsystem 68-VQFN -40 to 85 |
Texas Instruments |
| 2209 |
LM15851NKER |
12-Bit, Ultra-wideband RF sampling subsystem 68-VQFN -40 to 85 |
Texas Instruments |
| 2210 |
LM15851NKET |
12-Bit, Ultra-wideband RF sampling subsystem 68-VQFN -40 to 85 |
Texas Instruments |
| 2211 |
LM2780 |
Ultra-Low Ripple Switched Capacitor Voltage Inverter |
National Semiconductor |
| 2212 |
LM2780TP |
Ultra-Low Ripple Switched Capacitor Voltage Inverter |
National Semiconductor |
| 2213 |
LM2780TPX |
Ultra-Low Ripple Switched Capacitor Voltage Inverter |
National Semiconductor |
| 2214 |
LM2781 |
Ultra-Low Ripple Switched Capacitor Voltage Inverter |
National Semiconductor |
| 2215 |
LM2781TP |
Ultra-Low Ripple Switched Capacitor Voltage Inverter |
National Semiconductor |
| 2216 |
LM2781TPX |
Ultra-Low Ripple Switched Capacitor Voltage Inverter |
National Semiconductor |
| 2217 |
LM2936 |
Ultra-Low Quiescent Current 5V Regulator |
National Semiconductor |
| 2218 |
LM2936 |
Ultra-Low Quiescent Current LDO Voltage Regulator |
Texas Instruments |
| 2219 |
LM2936-3.0 |
Ultra-Low Quiescent Current 3.0V Regulator |
National Semiconductor |
| 2220 |
LM2936-3.0MDC |
Ultra-low quiescent current 3.0V regulator |
National Semiconductor |
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