| No. |
Part Name |
Description |
Manufacturer |
| 2221 |
NCP729 |
Linear Voltage Regulator, LDO, Ultra Low Noise, Very Low Iq, High PSRR, 200 mA |
ON Semiconductor |
| 2222 |
NJM12904 |
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200��s Pulse, 10 Duty |
Tyco Electronics |
| 2223 |
NJM12904D |
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200��s Pulse, 10 Duty |
Tyco Electronics |
| 2224 |
NJM12904E |
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200��s Pulse, 10 Duty |
Tyco Electronics |
| 2225 |
NJM12904L |
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200��s Pulse, 10 Duty |
Tyco Electronics |
| 2226 |
NJM12904M |
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200��s Pulse, 10 Duty |
Tyco Electronics |
| 2227 |
NJM12904R |
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200��s Pulse, 10 Duty |
Tyco Electronics |
| 2228 |
NJM12904V |
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200��s Pulse, 10 Duty |
Tyco Electronics |
| 2229 |
NM27C512N200 |
524,288-bit (64K x 8) high performance CMOS EPROM, 200ns |
National Semiconductor |
| 2230 |
NM27C512NE200 |
524,288-bit (64K x 8) high performance CMOS EPROM, 200ns |
National Semiconductor |
| 2231 |
NM27C512Q200 |
524,288-bit (64K x 8) high performance CMOS EPROM, 200ns |
National Semiconductor |
| 2232 |
NM27C512QE200 |
524,288-bit (64K x 8) high performance CMOS EPROM, 200ns |
National Semiconductor |
| 2233 |
NM27C512QM200 |
524,288-bit (64K x 8) high performance CMOS EPROM, 200ns |
National Semiconductor |
| 2234 |
NM27C512V200 |
524,288-bit (64K x 8) high performance CMOS EPROM, 200ns |
National Semiconductor |
| 2235 |
NM27C512VE200 |
524,288-bit (64K x 8) high performance CMOS EPROM, 200ns |
National Semiconductor |
| 2236 |
NSR0230 |
Schottky Barrier Diode, 30 V, 200 mA, Low VF |
ON Semiconductor |
| 2237 |
NTB30N20 |
Power MOSFET 30 Amps, 200 Volts N-Channel Enhancement-Mode D2PAK |
ON Semiconductor |
| 2238 |
NTB30N20-D |
Power MOSFET 30 Amps, 200 Volts N-Channel Enhancement-Mode D2PAK |
ON Semiconductor |
| 2239 |
NTB30N20T4 |
Power MOSFET 30 Amps, 200 Volts N-Channel Enhancement-Mode D2PAK |
ON Semiconductor |
| 2240 |
NTB30N20T4G |
Power MOSFET 30 Amps, 200 Volts N-Channel Enhancement-Mode D2PAK |
ON Semiconductor |
| 2241 |
NTE2764 |
Integrated Circuit NMOS, 64K Erasable EPROM, 200ns |
NTE Electronics |
| 2242 |
NTE597 |
Silicon Rectifier Ultra Fast, 200V, 8A |
NTE Electronics |
| 2243 |
NTE599 |
Silicon Rectifier Ultra Fast, 200V, 15A |
NTE Electronics |
| 2244 |
NTE6006 |
Fast Recovery Rectifier, 40A, 200ns |
NTE Electronics |
| 2245 |
NTE6007 |
Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 200V. Average rectified forward current 40A. |
NTE Electronics |
| 2246 |
NTE6008 |
Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A. |
NTE Electronics |
| 2247 |
NTE6009 |
Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A. |
NTE Electronics |
| 2248 |
NTE6010 |
Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 600V. Average rectified forward current 40A. |
NTE Electronics |
| 2249 |
NTE6011 |
Fast Recovery Rectifier, 40A, 200ns |
NTE Electronics |
| 2250 |
NTP30N20 |
Power MOSFET 30 Amps, 200 Volts N-Channel Enhancement-Mode TO-220 |
ON Semiconductor |
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