| No. |
Part Name |
Description |
Manufacturer |
| 2221 |
NTE7080 |
Integrated Circuit Precision Voltage Reference Diode, 1.235V |
NTE Electronics |
| 2222 |
NTGD3147F |
−20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6 |
ON Semiconductor |
| 2223 |
NTHD3101F |
Power MOSFET and Schottky Diode -20 V, FETKY®, P-Channel, -4.4A, w/ 4.1 A Schottky Barrier Diode, ChipFET¿ |
ON Semiconductor |
| 2224 |
NTHD3133PF |
-20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
| 2225 |
NTHD4N02 |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
| 2226 |
NTHD4N02FT1 |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
| 2227 |
NTHD4N02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
| 2228 |
NTHD4P02 |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
| 2229 |
NTHD4P02FT1 |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
| 2230 |
NTHD4P02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
| 2231 |
NTLGF3402P |
Power MOSFET and Schottky Diode, -20 V, -3.9 A, P-Channel |
ON Semiconductor |
| 2232 |
NTLJD3182FZ |
Power MOSFET and Schottky Diode, −20 V, −4.0 A, uCool¿, Single P−Channel & Schottky Barrier Diode, ESD |
ON Semiconductor |
| 2233 |
NTLJD3182FZ |
Power MOSFET and Schottky Diode, −20 V, −4.0 A, uCool¿, Single P−Channel & Schottky Barrier Diode, ESD |
ON Semiconductor |
| 2234 |
NTLJF1103P |
Power MOSFET and Schottky Diode -8 V, -4.3 A, µCool¿ P-Channel, with 2.0 A Schottky Barrier Diode, 2 x 2 mm, WDFN |
ON Semiconductor |
| 2235 |
NTLJF3117P |
Power MOSFET and Schottky Diode, -20 V, -4.1 A, P-Channel |
ON Semiconductor |
| 2236 |
NTLJF4156N |
Power MOSFET and Schottky Diode, 30 V, 4.6 A, N-Channel |
ON Semiconductor |
| 2237 |
NTLLD4901NF |
Power MOSFET and Integrated Schottky Diode, 30 V, Dual N-Channel |
ON Semiconductor |
| 2238 |
NTMD4184PF |
Power MOSFET and Schottky Diode, -30 V, -4.0 A, Single P-Channel |
ON Semiconductor |
| 2239 |
NTMD4884NF |
Power MOSFET and Schottky Diode, 30 V, 5.7 A, Single N-Channel |
ON Semiconductor |
| 2240 |
NTMFD4901NF |
Power MOSFET and Integrated Schottky Diode, 30 V, Dual N-Channel |
ON Semiconductor |
| 2241 |
NTMFD4902NF |
Power MOSFET and Integrated Schottky Diode, 30 V, Dual N-Channel |
ON Semiconductor |
| 2242 |
OA1150 |
Germanium PIN diode, universal purpose |
Felvezeto Katalogus 1966 |
| 2243 |
OA1160 |
Germanium diode, video demodulator |
Felvezeto Katalogus 1966 |
| 2244 |
OA1161 |
Germanium diode, into a high closing voltage, high resistance circuit |
Felvezeto Katalogus 1966 |
| 2245 |
OA150 |
Germanium PIN diode, universal purpose |
Felvezeto Katalogus 1966 |
| 2246 |
OA160 |
Germanium diode, video demodulator |
Felvezeto Katalogus 1966 |
| 2247 |
OA161 |
Germanium diode, into a high closing voltage, high resistance circuit |
Felvezeto Katalogus 1966 |
| 2248 |
OA47 |
Germanium gold bonded diode, general purpose |
Mullard |
| 2249 |
OA79 |
Point Contact Diode, this type has been superseded by the AA119 |
Philips |
| 2250 |
OA81 |
Point Contact Diode, this type has been superseded by the OA91 |
Philips |
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