No. |
Part Name |
Description |
Manufacturer |
2221 |
BF509 |
Silicon high-frequency PNP transistor, plastic case |
IPRS Baneasa |
2222 |
BF509 |
Epitaxial planar PNP transistor, intended for use as controlled VHF preamplifier |
SGS-ATES |
2223 |
BF509S |
Epitaxial planar PNP transistor, intended for use as controlled VHF AGC preamplifier |
SGS-ATES |
2224 |
BF516 |
Epitaxial planar PNP transistor, intended as general purpose amplifier and oscillator up to 1GHz |
SGS-ATES |
2225 |
BF606B |
Epitaxial planar PNP transistor, intended for application as VHF oscillator for mixer |
SGS-ATES |
2226 |
BF679 |
PNP silicon transistor, UHF |
SESCOSEM |
2227 |
BF679 |
Epitaxial planar PNP transistor, intended to be used in UHF-VHF range up to 900MHz |
SGS-ATES |
2228 |
BF679M |
Epitaxial planar PNP transistor, intended to be used in UHF-VHF range up to 900MHz, low thermal drift |
SGS-ATES |
2229 |
BF680 |
PNP silicon transistor, UHF |
SESCOSEM |
2230 |
BF914 |
Silicon high-frequency PNP transistor, plastic case |
IPRS Baneasa |
2231 |
BF921S |
Epitaxial planar NPN transistor, intended for use as preamplifier for surface wave TV IF filters and VHF-UHF wide band amplifier |
SGS-ATES |
2232 |
BFG90A |
Silicon planar epitaxial NPN transistor, designed for wideband application in CATV and MATV systems up to 2GHz |
Philips |
2233 |
BFP620E7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in SOT343 Package |
Infineon |
2234 |
BFP620FE7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in flatlead package TSFP-4 |
Infineon |
2235 |
BFP640 |
Digital Transistors - NPN SiGe RF Transistor, high gain low noise RF transistor in SOT343 Package, 4V, 50mA |
Infineon |
2236 |
BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA |
Infineon |
2237 |
BFP90A |
NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion |
Philips |
2238 |
BFP91A |
NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion |
Philips |
2239 |
BFP96 |
NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion |
Philips |
2240 |
BFQ10 |
Field effect transistor, differential amplifiers |
mble |
2241 |
BFQ11 |
Field effect transistor, differential amplifiers |
mble |
2242 |
BFQ12 |
Field effect transistor, differential amplifiers |
mble |
2243 |
BFQ13 |
Field effect transistor, differential amplifiers |
mble |
2244 |
BFQ14 |
Field effect transistor, differential amplifiers |
mble |
2245 |
BFQ15 |
Field effect transistor, differential amplifiers |
mble |
2246 |
BFQ16 |
Field effect transistor, differential amplifiers |
mble |
2247 |
BFQ22S |
Silicon Planar Epitaxial NPN transistor, intended for use in UHF and microwave aerial amplifiers, radar systems, oscilloscopes, spectrum analyses, etc. |
Philips |
2248 |
BFQ23 |
Silicon wideband PNP transistor, intended for use in UHF and microwave amplifiers, low intermodulation distorsion and high power gain |
Philips |
2249 |
BFQ24 |
PNP Silicon planar epitaxial transistor, intended for use in UHF and microwave, NPN complement is BFQ22S |
Philips |
2250 |
BFQ32S |
Silicon planar epitaxial PNP transistor, intended for use in UHF applications |
Philips |
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