| No. |
Part Name |
Description |
Manufacturer |
| 2221 |
1N759A |
Silicon Power Zener Diodes |
Vishay |
| 2222 |
1NH41 |
FAST RECOVERY RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 2223 |
1NH42 |
FAST RECOVERY RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 2224 |
1R5DL41A |
High Efficiency Rectifier (HED) Switching Mode Power Supply Applications |
TOSHIBA |
| 2225 |
1R5DU41 |
SUPER FAST RECOVERY RECTIFIER (SWITCHING TYPE POWER SUPPLY APPLICATIONS) |
TOSHIBA |
| 2226 |
1R5GH45 |
FAST RECOVERY RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 2227 |
1R5GU41 |
DUPER FAST RECOVERY RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 2228 |
1R5JH45 |
FAST RECOVERY RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 2229 |
1R5NH41 |
FAST RECOVERY RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 2230 |
1R5NH45 |
FAST RECOVERY RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 2231 |
1R5NU41 |
SUPER FAST RECOVERY RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 2232 |
1S1472 |
Radio & TV power supply silicon rectifier |
TOSHIBA |
| 2233 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2234 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2235 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2236 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2237 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2238 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2239 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2240 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2241 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2242 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2243 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2244 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2245 |
1S5015 |
Silicon power zener diode 10W 15V |
Texas Instruments |
| 2246 |
1S5015A |
Silicon power zener diode 10W 15V, ±5% tolerance |
Texas Instruments |
| 2247 |
1S5015C |
Silicon power zener diode 10W 15V, double anode |
Texas Instruments |
| 2248 |
1S5015R |
Silicon power zener diode 10W 15V, reverse polarity |
Texas Instruments |
| 2249 |
1S5016 |
Silicon power zener diode 10W 16V |
Texas Instruments |
| 2250 |
1S5016A |
Silicon power zener diode 10W 16V, ±5% tolerance |
Texas Instruments |
| | | |
