| No. |
Part Name |
Description |
Manufacturer |
| 2251 |
BSS138-7 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 2252 |
BSS138DW-7-F |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 2253 |
BSS138K |
50V N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 2254 |
BSS138W |
50V N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 2255 |
BSS138W-7 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 2256 |
BSS84 |
P-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 2257 |
BSS84-7 |
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 2258 |
BSS8402DW-7 |
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 2259 |
BSS84V |
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 2260 |
BSS84V-7 |
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 2261 |
BSS84W-7-F |
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 2262 |
BSV78 |
Field effect transistor |
mble |
| 2263 |
BSV78 |
Silicon n channel field effect transistor, Junction FET |
Mullard |
| 2264 |
BSV79 |
Field effect transistor |
mble |
| 2265 |
BSV79 |
Silicon n channel field effect transistor, Junction FET |
Mullard |
| 2266 |
BSV80 |
Field effect transistor |
mble |
| 2267 |
BSV80 |
Silicon n channel field effect transistor, Junction FET |
Mullard |
| 2268 |
BSV81 |
Silicon n channel field effect transistor, insulated GATE FET (MOST) |
Mullard |
| 2269 |
BUD44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS |
ON Semiconductor |
| 2270 |
BUL44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
ON Semiconductor |
| 2271 |
BUL45D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
ON Semiconductor |
| 2272 |
BWD |
Aluminum Housed Wirewound Resistors, Anodized aluminum casing to utilize heat-sink effect, Self-protecting, Short circuit proof, Protection according to IP 54 |
Vishay |
| 2273 |
BXY28 |
Silicon planar epitaxial varactor diode for use in high C efficiency multipliers in the 2-4 GHz range |
Mullard |
| 2274 |
BXY56 |
High Effiency Step Recovery Diode |
Philips |
| 2275 |
BXY57 |
High Effiency Step Recovery Diode |
Philips |
| 2276 |
BYG20D |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 2277 |
BYG20G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 2278 |
BYG20J |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 2279 |
BYG23M |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 2280 |
BYM07-100 |
SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST EFFICIENT RECTIFIER |
General Semiconductor |
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