No. |
Part Name |
Description |
Manufacturer |
2251 |
HS-4424RH |
MOSFET Driver, Dual Non-Inverting, 250ns, 2A, 10V LVLO, Rad-Hard |
Intersil |
2252 |
HSTL16919 |
9-bit to 18-bit HSTL to LVTTL memory address latch with 12 kohm pull-up resistor |
Philips |
2253 |
HSTL16919 |
9-bit to 18-bit HSTL to LVTTL memory address latch with 12 kohm pull-up resistor |
Philips |
2254 |
HSTL16919DGG |
9-bit to 18-bit HSTL to LVTTL memory address latch with 12kOhm pull-up resistor |
Philips |
2255 |
HUF76439S3ST |
71A, 60V, 0.014Ohm, N-Channel, Logic Lvl UltraFET Power MOSFET |
Fairchild Semiconductor |
2256 |
HY51V65163HGLJ-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power |
Hynix Semiconductor |
2257 |
HY51V65163HGLJ-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
Hynix Semiconductor |
2258 |
HY51V65163HGLJ-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
Hynix Semiconductor |
2259 |
HY51V65163HGLT-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power |
Hynix Semiconductor |
2260 |
HY51V65163HGLT-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
Hynix Semiconductor |
2261 |
HY51V65163HGLT-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
Hynix Semiconductor |
2262 |
HY51VS65163HGJ-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns |
Hynix Semiconductor |
2263 |
HY51VS65163HGJ-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns |
Hynix Semiconductor |
2264 |
HY51VS65163HGJ-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns |
Hynix Semiconductor |
2265 |
HY51VS65163HGLJ-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power |
Hynix Semiconductor |
2266 |
HY51VS65163HGLJ-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
Hynix Semiconductor |
2267 |
HY51VS65163HGLJ-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
Hynix Semiconductor |
2268 |
HY51VS65163HGLT-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power |
Hynix Semiconductor |
2269 |
HY51VS65163HGLT-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
Hynix Semiconductor |
2270 |
HY51VS65163HGLT-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
Hynix Semiconductor |
2271 |
HY51VS65163HGT-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns |
Hynix Semiconductor |
2272 |
HY51VS65163HGT-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns |
Hynix Semiconductor |
2273 |
HY51VS65163HGT-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns |
Hynix Semiconductor |
2274 |
HY57V161610ETP-10I |
2 banks x 512K x 16 bit synchronous DRAM, LVTTL, 100MHz |
Hynix Semiconductor |
2275 |
HY57V161610ETP-15I |
2 banks x 512K x 16 bit synchronous DRAM, LVTTL, 66MHz |
Hynix Semiconductor |
2276 |
HY57V161610ETP-55I |
2 banks x 512K x 16 bit synchronous DRAM, LVTTL, 183MHz |
Hynix Semiconductor |
2277 |
HY57V161610ETP-5I |
2 banks x 512K x 16 bit synchronous DRAM, LVTTL, 200MHz |
Hynix Semiconductor |
2278 |
HY57V161610ETP-6I |
2 banks x 512K x 16 bit synchronous DRAM, LVTTL, 166MHz |
Hynix Semiconductor |
2279 |
HY57V161610ETP-7I |
2 banks x 512K x 16 bit synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
2280 |
HY57V161610ETP-8I |
2 banks x 512K x 16 bit synchronous DRAM, LVTTL, 125MHz |
Hynix Semiconductor |
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