| No. |
Part Name |
Description |
Manufacturer |
| 2251 |
SP8713IGMPAS |
1100MHz Very Low Current Three Modulus Divider |
Mitel Semiconductor |
| 2252 |
SP8714 |
2100 MHz Very Low Current Multi-Modulus Divider |
Zarlink Semiconductor |
| 2253 |
SP8714IGMPAC |
2100MHz Very Low Current Multi-Modulus Divider |
Mitel Semiconductor |
| 2254 |
SP8714IGMPAS |
2100MHz Very Low Current Multi-Modulus Divider |
Mitel Semiconductor |
| 2255 |
SP8715 |
0.5-7.0V; 10mA; 1100MHz very low current multi-modulus divider. For cellular telephone, cordless telephone, mobile radio |
Mitel Semiconductor |
| 2256 |
SP8715 |
1100MHz Very Low Current Multi-Modulus Divider |
Zarlink Semiconductor |
| 2257 |
SP8715IG |
0.5-7.0V; 10mA; 1100MHz very low current multi-modulus divider. For cellular telephone, cordless telephone, mobile radio |
Mitel Semiconductor |
| 2258 |
SP8715IGMPAC |
1100MHz Very Low Current Multi-Modulus Divider |
Mitel Semiconductor |
| 2259 |
SP8715IGMPAS |
1100MHz Very Low Current Multi-Modulus Divider |
Mitel Semiconductor |
| 2260 |
SP8715MPAS |
0.5-7.0V; 10mA; 1100MHz very low current multi-modulus divider. For cellular telephone, cordless telephone, mobile radio |
Mitel Semiconductor |
| 2261 |
ST |
SuperTan® Wet Tantalum Capacitors with Hermetic Seal, FEATURES: Very High Capacitance, 10 to 1800µF, 25 to 125VDC, -55°C to + 125°C, Very Low ESR and High Ripple Current |
Vishay |
| 2262 |
ST |
SuperTan® Wet Tantalum Capacitors with Hermetic Seal, FEATURES: Very High Capacitance, 10 to 1800µF, 25 to 125VDC, -55°C to + 125°C, Very Low ESR and High Ripple Current |
Vishay |
| 2263 |
STC2G15 |
BCMOS VOLTAGE REGULATOR DESIGNED FOR USE WITH VERY LOW ESR AND TANTALIUM OUTPUT CAPACITOR |
ST Microelectronics |
| 2264 |
STC2G15R |
BCMOS VOLTAGE REGULATOR DESIGNED FOR USE WITH VERY LOW ESR AND TANTALIUM OUTPUT CAPACITOR |
ST Microelectronics |
| 2265 |
STGB19NC60H |
19 A - 600 V - very fast IGBT |
ST Microelectronics |
| 2266 |
STGB19NC60HD |
19 A, 600 V, very fast IGBT with Ultrafast diode |
ST Microelectronics |
| 2267 |
STGB19NC60HDT4 |
19 A, 600 V, very fast IGBT with Ultrafast diode |
ST Microelectronics |
| 2268 |
STGB19NC60HT4 |
19 A - 600 V - very fast IGBT |
ST Microelectronics |
| 2269 |
STGB20NC60V |
30 A, 600 V, very fast IGBT |
ST Microelectronics |
| 2270 |
STGB20V60DF |
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed |
ST Microelectronics |
| 2271 |
STGB20V60F |
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed |
ST Microelectronics |
| 2272 |
STGB30V60DF |
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed |
ST Microelectronics |
| 2273 |
STGB30V60F |
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed |
ST Microelectronics |
| 2274 |
STGB3NC120HD |
7 A, 1200 V very fast IGBT with Ultrafast diode |
ST Microelectronics |
| 2275 |
STGB3NC120HDT4 |
7 A, 1200 V very fast IGBT with Ultrafast diode |
ST Microelectronics |
| 2276 |
STGB40V60F |
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed |
ST Microelectronics |
| 2277 |
STGB7NC60HD |
N-CHANNEL 7A - 600V - TO-220FP/D2PAK VERY FAST POWERMESH IGBT |
ST Microelectronics |
| 2278 |
STGB7NC60HDT4 |
N-CHANNEL 7A - 600V - TO-220FP/D2PAK VERY FAST POWERMESH IGBT |
ST Microelectronics |
| 2279 |
STGD10NC60H |
N-channel 10 A, 600 V, DPAK very fast PowerMESH(TM) IGBT |
ST Microelectronics |
| 2280 |
STGD10NC60HT4 |
N-channel 10 A, 600 V, DPAK very fast PowerMESH(TM) IGBT |
ST Microelectronics |
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