No. |
Part Name |
Description |
Manufacturer |
2251 |
PST7026 |
System reset |
Mitsumi Electric |
2252 |
PST7026M |
System reset |
Mitsumi Electric |
2253 |
PST7027 |
System reset |
Mitsumi Electric |
2254 |
PST7027M |
System reset |
Mitsumi Electric |
2255 |
PST7028 |
System reset |
Mitsumi Electric |
2256 |
PST7028M |
System reset |
Mitsumi Electric |
2257 |
PST7029 |
System reset |
Mitsumi Electric |
2258 |
PST7029M |
System reset |
Mitsumi Electric |
2259 |
PT6702 |
1.3 to 2.05Vout 3.3V-Input 13Amp Programmable ISR, CU Case |
Texas Instruments |
2260 |
PT6702A |
1.3 to 2.05Vout 3.3V-Input 13Amp Programmable ISR, CU Case |
Texas Instruments |
2261 |
PT6702C |
1.3 to 2.05Vout 3.3V-Input 13Amp Programmable ISR, CU Case |
Texas Instruments |
2262 |
PT6702N |
1.3 to 2.05Vout 3.3V-Input 13Amp Programmable ISR, CU Case |
Texas Instruments |
2263 |
PT7702 |
1.3V to 2.05V 15A 5V-Input 'Big Hammer' Programmabe ISR |
Texas Instruments |
2264 |
PT7702C |
1.3V to 2.05V 15A 5V-Input 'Big Hammer' Programmabe ISR |
Texas Instruments |
2265 |
PT9702B |
UHF Power Transistor |
Motorola |
2266 |
PT9702B |
20W UHF Power Transistor 28V 400MHz, gold metalized, class A, AB or C operation, common emitter, isolated package |
TRW |
2267 |
PTFB181702FC-V1 |
High Power RF LDMOS FET 170W, 28V, 1805 - 1880 MHz |
Wolfspeed |
2268 |
PUB4702 |
Composite Device - Power Transistor Arrays |
Panasonic |
2269 |
PXAC241702FC-V1 |
High Power RF LDMOS FET 150W, 28V, 2300 - 2400 MHz |
Wolfspeed |
2270 |
PZB27020U |
Microwave Power NPN Transistor |
Philips |
2271 |
Q-62702-G66 |
GaAs MMIC (Variable gain amplifier MMIC-Amplifier for mobile communication Typical Gain Control range over 50dB) |
Siemens |
2272 |
Q60702-S111 |
PNP SILICON PLANAR TRANSISTORS |
Siemens |
2273 |
Q62702-A0042 |
Silicon Crossover Ring Quad Schottky Diode |
Siemens |
2274 |
Q62702-A0043 |
Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers, phase detectors and modulators) |
Siemens |
2275 |
Q62702-A0062 |
Silicon Schottky Diode (DBS mixer application to 10 GHz Low noise figure Low barrier type) |
Siemens |
2276 |
Q62702-A0960 |
Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) |
Siemens |
2277 |
Q62702-A1004 |
Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) |
Siemens |
2278 |
Q62702-A1006 |
Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers, phase detectors and modulators) |
Siemens |
2279 |
Q62702-A1010 |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
Siemens |
2280 |
Q62702-A1017 |
Silicon Dual Schottky Diode (High barrier diode for balanced mixers, phase detectors and modulators) |
Siemens |
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