| No. |
Part Name |
Description |
Manufacturer |
| 2251 |
BD533 |
50.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 20 hFE. |
Continental Device India Limited |
| 2252 |
BD533 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
| 2253 |
BD533J |
50.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 30 - 75 hFE. |
Continental Device India Limited |
| 2254 |
BD533K |
50.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 40 - 100 hFE. |
Continental Device India Limited |
| 2255 |
BD534 |
50.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 20 hFE. |
Continental Device India Limited |
| 2256 |
BD534 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
| 2257 |
BD535 |
50.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 20 hFE. |
Continental Device India Limited |
| 2258 |
BD535 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
| 2259 |
BD536 |
50.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 20 hFE. |
Continental Device India Limited |
| 2260 |
BD536 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
| 2261 |
BD537 |
50.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 15 hFE. |
Continental Device India Limited |
| 2262 |
BD537 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
| 2263 |
BD538 |
50.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 15 hFE. |
Continental Device India Limited |
| 2264 |
BD538 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
| 2265 |
BD561 |
4A medium power transistor NPN silicon 40V 40W |
Motorola |
| 2266 |
BD562 |
4A medium power transistor PNP silicon 40V 40W |
Motorola |
| 2267 |
BD675A |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 2268 |
BD676A |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 2269 |
BD677 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 2270 |
BD677A |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 2271 |
BD678 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 2272 |
BD678A |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 2273 |
BD679 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 2274 |
BD679A |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 2275 |
BD680 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 2276 |
BD680A |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 2277 |
BD681 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 2278 |
BD682 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 2279 |
BD905 |
90.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 15.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
| 2280 |
BD906 |
90.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 15.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
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