| No. |
Part Name |
Description |
Manufacturer |
| 2251 |
2N6117 |
PNPN Silicon Programmabe Unijunction Transistor |
Texas Instruments |
| 2252 |
2N6118 |
Silicon programmable unijuction transistor. |
Motorola |
| 2253 |
2N6118 |
PNPN Silicon Programmabe Unijunction Transistor |
Texas Instruments |
| 2254 |
2N6137 |
Military Planar TO-18 Hermetic |
Unitrode |
| 2255 |
2N6198 |
12 W, 28 V, 100-200 MHz, VHF communication |
Acrian |
| 2256 |
2N6199 |
25 W, 28 V, 100-200 MHz, VHF communication |
Acrian |
| 2257 |
2SA1020 |
PNP EPITAXIAL SILICON TRANSISTOR |
Unisonic Technologies |
| 2258 |
2SA684 |
PNP EPITAXIAL PLANAR TRANSISTOR |
Unisonic Technologies |
| 2259 |
2SA733 |
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR |
Unisonic Technologies |
| 2260 |
2SA928A |
PNP transistor for audio power amplifier, collector-emitter voltage=30V, collector current =2A |
Unisonic Technologies |
| 2261 |
2SB772 |
MEDIUM POWER LOW VOLTAGE TRANSISTOR |
Unisonic Technologies |
| 2262 |
2SB772S |
MEDIUM POWER LOW VOLTAGE TRANSISTOR |
Unisonic Technologies |
| 2263 |
2SC2328A |
AUDIO POWER AMPLIFIER |
Unisonic Technologies |
| 2264 |
2SC5289-T1 |
Mobile communications transmission power amplifier |
NEC |
| 2265 |
2SD1616 |
NPN EPITAXIAL SILICON TRANSISTOR |
Unisonic Technologies |
| 2266 |
2SD1616A |
NPN EPITAXIAL SILICON TRANSISTOR |
Unisonic Technologies |
| 2267 |
2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A. |
USHA India LTD |
| 2268 |
2SD882 |
NPN medium power low vow voltage transistor |
Unisonic Technologies |
| 2269 |
2SD882S |
NPN EPITAXIAL SILICON TRANSISTOR |
Unisonic Technologies |
| 2270 |
2SH13 |
Unijunction transistor |
TOSHIBA |
| 2271 |
2SH13 |
Silicon P emitter unijunction transistor, relaxation oscillator, SCR Trigger and Timer Applications |
TOSHIBA |
| 2272 |
2SH14 |
Unijunction transistor |
TOSHIBA |
| 2273 |
2SH14 |
Silicon P emitter unijunction transistor, relaxation oscillator, SCR Trigger and Timer Applications |
TOSHIBA |
| 2274 |
2SH20 |
UNI-JUNCTION TRANSISTOR |
TOSHIBA |
| 2275 |
2SH20 |
Silicon P emitter planar unijunction transistor |
TOSHIBA |
| 2276 |
2SH21 |
Silicon P emitter planar unijunction transistor |
TOSHIBA |
| 2277 |
2SH22 |
UNI-JUNCTION TRANSISTOR |
TOSHIBA |
| 2278 |
2SH25 |
Unijunction transistor |
NEC |
| 2279 |
30KP100 |
Diode TVS Single Uni-Dir 100V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 2280 |
30KP100A |
Diode TVS Single Uni-Dir 100V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
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