| No. |
Part Name |
Description |
Manufacturer |
| 2281 |
RD9.1JB |
400mW Zener Diode, low noise, Sharp Breakdown caracteristics, DHD |
NEC |
| 2282 |
RD9.1JS |
DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode |
NEC |
| 2283 |
RD9.1UJ |
LOW NOISE SHARP BREAKDOWN CHARACTERISTICS ZENER DIODES 2PIN ULTRA SUPER MINI MOLD |
NEC |
| 2284 |
SI4724CY |
N-Channel Synchronous MOSFETs with Break-Before-Make |
Vishay |
| 2285 |
SI4726CY |
N-Channel Synchronous MOSFETs with Break-Before-Make |
Vishay |
| 2286 |
SI4728CY |
N-Channel Synchronous MOSFETs with Break-Before-Make |
Vishay |
| 2287 |
SI4732CY |
N-Channel Synchronous MOSFETs with Break-Before-Make |
Vishay |
| 2288 |
SI4738CY |
N-Channel Synchronous MOSFETs with Break-Before-Make |
Vishay |
| 2289 |
SI4768CY |
N-Channel Synchronous MOSFETs with Break-Before-Make |
Vishay |
| 2290 |
SI4770CY |
N-Channel Synchronous MOSFETs with Break-Before-Make |
Vishay |
| 2291 |
SI9912 |
Dual MOSFET Bootstrapped Driver with Break-Before-Make |
Vishay |
| 2292 |
SI9913 |
Dual MOSFET Bootstrapped Driver with Break-Before-Make |
Vishay |
| 2293 |
SIP41101 |
Half-Bridge N-Channel MOSFET Driver With Break-Before-Make |
Vishay |
| 2294 |
SMBJ100C |
Surface mount transient voltage suppressor. Breakdown voltage 111 V (min), 136 V (max). Test current 1.0 mA. Bidirectional. |
Jinan Gude Electronic Device |
| 2295 |
SMBJ100CA |
Surface mount transient voltage suppressor. Breakdown voltage 111 V (min), 123 V (max). Test current 1.0 mA. Bidirectional. |
Jinan Gude Electronic Device |
| 2296 |
SMBJ110C |
Surface mount transient voltage suppressor. Breakdown voltage 122 V (min), 149 V (max). Test current 1.0 mA. Bidirectional. |
Jinan Gude Electronic Device |
| 2297 |
SMBJ110CA |
Surface mount transient voltage suppressor. Breakdown voltage 122 V (min), 135 V (max). Test current 1.0 mA. Bidirectional. |
Jinan Gude Electronic Device |
| 2298 |
SMBJ120C |
Surface mount transient voltage suppressor. Breakdown voltage 133 V (min), 163 V (max). Test current 1.0 mA. Bidirectional. |
Jinan Gude Electronic Device |
| 2299 |
SMBJ120CA |
Surface mount transient voltage suppressor. Breakdown voltage 133 V (min), 147 V (max). Test current 1.0 mA. Bidirectional. |
Jinan Gude Electronic Device |
| 2300 |
SMBJ130C |
Surface mount transient voltage suppressor. Breakdown voltage 144 V (min), 176 V (max). Test current 1.0 mA. Bidirectional. |
Jinan Gude Electronic Device |
| 2301 |
SMBJ130CA |
Surface mount transient voltage suppressor. Breakdown voltage 144 V (min), 159 V (max). Test current 1.0 mA. Bidirectional. |
Jinan Gude Electronic Device |
| 2302 |
SMBJ150C |
Surface mount transient voltage suppressor. Breakdown voltage 167 V (min), 204 V (max). Test current 1.0 mA. Bidirectional. |
Jinan Gude Electronic Device |
| 2303 |
SMBJ150CA |
Surface mount transient voltage suppressor. Breakdown voltage 167 V (min), 185 V (max). Test current 1.0 mA. Bidirectional. |
Jinan Gude Electronic Device |
| 2304 |
SMBJ160C |
Surface mount transient voltage suppressor. Breakdown voltage 178 V (min), 218 V (max). Test current 1.0 mA. Bidirectional. |
Jinan Gude Electronic Device |
| 2305 |
SMBJ160CA |
Surface mount transient voltage suppressor. Breakdown voltage 178 V (min), 197 V (max). Test current 1.0 mA. Bidirectional. |
Jinan Gude Electronic Device |
| 2306 |
SMBJ170C |
Surface mount transient voltage suppressor. Breakdown voltage 189 V (min), 231 V (max). Test current 1.0 mA. Bidirectional. |
Jinan Gude Electronic Device |
| 2307 |
SMBJ170CA |
Surface mount transient voltage suppressor. Breakdown voltage 189 V (min), 209 V (max). Test current 1.0 mA. Bidirectional. |
Jinan Gude Electronic Device |
| 2308 |
SMBTA06U |
General Purpose Transistors - NPN Silicon AF Transistor Array with high breakdown voltage |
Infineon |
| 2309 |
SMBTA06UPN |
General Purpose Transistors - NPN/PNP Silicon Switching Transistor Array with high breakdown voltage |
Infineon |
| 2310 |
SMBTA56U |
General Purpose Transistors - PNP Silicon AF Transistor Array with high breakdown voltage |
Infineon |
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