| No. |
Part Name |
Description |
Manufacturer |
| 2281 |
5962R9651201QXA |
RadHard MSI: SMD. Quadruple 2-input NAND gates. Class Q, QML. Lead finish solder. Total dose 1E5 rads(Si). |
Aeroflex Circuit Technology |
| 2282 |
5962R9651201QXC |
RadHard MSI: SMD. Quadruple 2-input NAND gates. Class Q, QML. Lead finish gold. Total dose 1E5 rads(Si). |
Aeroflex Circuit Technology |
| 2283 |
5962R9651201QXX |
RadHard MSI: SMD. Quadruple 2-input NAND gates. Class Q, QML. Lead finish optional. Total dose 1E5 rads(Si). |
Aeroflex Circuit Technology |
| 2284 |
5962R9651201VCA |
RadHard MSI: SMD. Quadruple 2-input NAND gates. Class V, QML. Lead finish solder. Total dose 1E5 rads(Si). |
Aeroflex Circuit Technology |
| 2285 |
5962R9651201VCC |
RadHard MSI: SMD. Quadruple 2-input NAND gates. Class V, QML. Lead finish gold. Total dose 1E5 rads(Si). |
Aeroflex Circuit Technology |
| 2286 |
5962R9651201VCX |
RadHard MSI: SMD. Quadruple 2-input NAND gates. Class V, QML. Lead finish optional. Total dose 1E5 rads(Si). |
Aeroflex Circuit Technology |
| 2287 |
5962R9651201VXA |
RadHard MSI: SMD. Quadruple 2-input NAND gates. Class V, QML. Lead finish solder. Total dose 1E5 rads(Si). |
Aeroflex Circuit Technology |
| 2288 |
5962R9651201VXC |
RadHard MSI: SMD. Quadruple 2-input NAND gates. Class V, QML. Lead finish gold. Total dose 1E5 rads(Si). |
Aeroflex Circuit Technology |
| 2289 |
5962R9651201VXX |
RadHard MSI: SMD. Quadruple 2-input NAND gates. Class V, QML. Lead finish optional. Total dose 1E5 rads(Si). |
Aeroflex Circuit Technology |
| 2290 |
5C121 |
1200 GATE CHMOS H-SERIES ERASABLE PROGRAMMABLE LOGIC DEVICE |
Intel |
| 2291 |
5DZ120 |
Zener Silicon Diode 5.0W |
IPRS Baneasa |
| 2292 |
5KP120 |
TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR |
DC Components |
| 2293 |
5KP120 |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 2294 |
5KP120 |
120.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2295 |
5KP120 |
120.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2296 |
5KP120 |
Diode TVS Single Uni-Dir 120V 5KW 2-Pin Case P600 |
New Jersey Semiconductor |
| 2297 |
5KP120 |
Diode TVS Single Uni-Dir 120V 5KW 2-Pin Case P600 |
New Jersey Semiconductor |
| 2298 |
5KP120(C)A |
120V; 5000W transient voltage suppressor |
Diodes |
| 2299 |
5KP120(C)A |
120V; 5000W transient voltage suppressor |
Diodes |
| 2300 |
5KP120A |
TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR |
DC Components |
| 2301 |
5KP120A |
120.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2302 |
5KP120A |
120.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2303 |
5KP120A |
TRANSIENT VOLTAGE SUPPRESSORS |
Micro Commercial Components |
| 2304 |
5KP120A |
Diode TVS Single Uni-Dir 120V 5KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 2305 |
5KP120A |
Diode TVS Single Uni-Dir 120V 5KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 2306 |
5KP120A-G |
Transient Voltage Suppressor (TVS) Axial Lead, PPPM=5000Watts, VRWM=120V, Tolerance=5% |
Comchip Technology |
| 2307 |
5KP120A-G |
Transient Voltage Suppressor (TVS) Axial Lead, PPPM=5000Watts, VRWM=120V, Tolerance=5% |
Comchip Technology |
| 2308 |
5KP120A-HF |
Halogen Free Transient Voltage Suppressor (TVS) Axial Lead, PPPM=5000Watts, VRWM=120V, Tolerance=5% |
Comchip Technology |
| 2309 |
5KP120A-HF |
Halogen Free Transient Voltage Suppressor (TVS) Axial Lead, PPPM=5000Watts, VRWM=120V, Tolerance=5% |
Comchip Technology |
| 2310 |
5KP120Ae3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
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