DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for D EF

Datasheets found :: 2645
Page: | 73 | 74 | 75 | 76 | 77 | 78 | 79 | 80 | 81 |
No. Part Name Description Manufacturer
2281 PTF10160 85 Watts, 860�960 MHz GOLDMOS Field Effect Transistor Ericsson Microelectronics
2282 PTF10161 165 Watts, 869�894 MHz GOLDMOS Field Effect Transistor Ericsson Microelectronics
2283 PTF10162 18 Watts, 860�960 MHz GOLDMOS Field Effect Transistor Ericsson Microelectronics
2284 PTF10193 12 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Ericsson Microelectronics
2285 PTF10195 125 Watts, 869�894 MHz GOLDMOS Field Effect Transistor Ericsson Microelectronics
2286 PTF102027 40 Watts, 925�960 MHz GOLDMOS Field Effect Transistor Ericsson Microelectronics
2287 PTF102028 18 Watts, 860�960 MHz GOLDMOS Field Effect Transistor Ericsson Microelectronics
2288 PTF180101 LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz Infineon
2289 PTF180101S LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz Infineon
2290 PTF180601 LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz Infineon
2291 PTF180601C LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz Infineon
2292 PTF180601E LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz Infineon
2293 PTF181301 LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz Infineon
2294 PTF181301A LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz Infineon
2295 PTF191601 LDMOS RF Power Field Effect Transistor 160 W/ 1930-1990 MHz Infineon
2296 PTF191601E LDMOS RF Power Field Effect Transistor 160 W/ 1930-1990 MHz Infineon
2297 PTF210301 LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz Infineon
2298 PTF210301A LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz Infineon
2299 PTF210301E LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz Infineon
2300 PTF210451 LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz Infineon
2301 PTF210451E LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz Infineon
2302 PTF210901 LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz Infineon
2303 PTF210901E LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz Infineon
2304 PTF211301 LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz Infineon
2305 PTF211301A LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz Infineon
2306 PTF211802 LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz Infineon
2307 PTF211802A LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz Infineon
2308 PTF211802E LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz Infineon
2309 Q62702G63 GaAs MMIC (Power amplifier for GSM class 4 phones 3.2 W 35dBm output power at 3.5 V Overall power added efficiency 50%) Siemens
2310 S2370 V(dsx): 60V; V(dgr): 60V; V(gss): +-20V; 40A; 125W; field effect transistor. For high speed high current switching applications, chopper regular, DC-DC converter and motor drive applications TOSHIBA


Datasheets found :: 2645
Page: | 73 | 74 | 75 | 76 | 77 | 78 | 79 | 80 | 81 |



© 2024 - www Datasheet Catalog com