No. |
Part Name |
Description |
Manufacturer |
2281 |
PTF10160 |
85 Watts, 860�960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
2282 |
PTF10161 |
165 Watts, 869�894 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
2283 |
PTF10162 |
18 Watts, 860�960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
2284 |
PTF10193 |
12 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
2285 |
PTF10195 |
125 Watts, 869�894 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
2286 |
PTF102027 |
40 Watts, 925�960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
2287 |
PTF102028 |
18 Watts, 860�960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
2288 |
PTF180101 |
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz |
Infineon |
2289 |
PTF180101S |
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz |
Infineon |
2290 |
PTF180601 |
LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz |
Infineon |
2291 |
PTF180601C |
LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz |
Infineon |
2292 |
PTF180601E |
LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz |
Infineon |
2293 |
PTF181301 |
LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz |
Infineon |
2294 |
PTF181301A |
LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz |
Infineon |
2295 |
PTF191601 |
LDMOS RF Power Field Effect Transistor 160 W/ 1930-1990 MHz |
Infineon |
2296 |
PTF191601E |
LDMOS RF Power Field Effect Transistor 160 W/ 1930-1990 MHz |
Infineon |
2297 |
PTF210301 |
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz |
Infineon |
2298 |
PTF210301A |
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz |
Infineon |
2299 |
PTF210301E |
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz |
Infineon |
2300 |
PTF210451 |
LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz |
Infineon |
2301 |
PTF210451E |
LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz |
Infineon |
2302 |
PTF210901 |
LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz |
Infineon |
2303 |
PTF210901E |
LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz |
Infineon |
2304 |
PTF211301 |
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz |
Infineon |
2305 |
PTF211301A |
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz |
Infineon |
2306 |
PTF211802 |
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz |
Infineon |
2307 |
PTF211802A |
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz |
Infineon |
2308 |
PTF211802E |
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz |
Infineon |
2309 |
Q62702G63 |
GaAs MMIC (Power amplifier for GSM class 4 phones 3.2 W 35dBm output power at 3.5 V Overall power added efficiency 50%) |
Siemens |
2310 |
S2370 |
V(dsx): 60V; V(dgr): 60V; V(gss): +-20V; 40A; 125W; field effect transistor. For high speed high current switching applications, chopper regular, DC-DC converter and motor drive applications |
TOSHIBA |
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