No. |
Part Name |
Description |
Manufacturer |
2281 |
30KW270A |
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
2282 |
30KW288 |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
2283 |
30KW288A |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
2284 |
31DF2 |
3 Amp. Glass Passivated Ultrafast Recovery Rectifier |
Fagor |
2285 |
31DF4 |
3 Amp. Glass Passivated Ultrafast Recovery Rectifier |
Fagor |
2286 |
3EZ100 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
2287 |
3EZ100 |
100 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
2288 |
3EZ100 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
2289 |
3EZ11 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
2290 |
3EZ11 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
2291 |
3EZ110 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
2292 |
3EZ110 |
110 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
2293 |
3EZ110 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
2294 |
3EZ12 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
2295 |
3EZ12 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
2296 |
3EZ120 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
2297 |
3EZ120 |
120 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
2298 |
3EZ120 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
2299 |
3EZ13 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
2300 |
3EZ130 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
2301 |
3EZ130 |
130 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
2302 |
3EZ130 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
2303 |
3EZ14 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
2304 |
3EZ14 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
2305 |
3EZ140 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
2306 |
3EZ140 |
140 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
2307 |
3EZ140 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
2308 |
3EZ15 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
2309 |
3EZ15 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
2310 |
3EZ150 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
| | | |