| No. |
Part Name |
Description |
Manufacturer |
| 2281 |
AS186-302 |
GaAs IC High Isolation Positive Control SPDT Non-Reflective Switch DC-4.0 GHz |
Skyworks Solutions |
| 2282 |
AS186-302LF |
GaAs IC High-Isolation Positive Control SPDT Nonreflective Switch LF-4 GHz |
Skyworks Solutions |
| 2283 |
AS196-307 |
GaAs IC High Isolation SPDT Non-Reflective Switch with Driver DC�6.0 GHz |
Alpha Industries Inc |
| 2284 |
AS196-307 |
GaAs IC High Isolation SPDT Non-Reflective Switch with Driver DC�6.0 GHz |
Alpha Industries Inc |
| 2285 |
AS196-307 |
GaAs IC High Isolation SPDT Non-Reflective Switch with Driver DC-6.0 GHz |
Skyworks Solutions |
| 2286 |
ATL60 |
The ATL60 series CMOS Gate Arrays are fabricated using a 0.6 micron drawn gate, oxide isolated, triple level metal process. Extensive cell libraries are available and support the major CAD software tools. |
Atmel |
| 2287 |
BA3121 |
Ground isolation amplifier |
ROHM |
| 2288 |
BA3121/F/N |
Audio LSIs > Car audio accessories > Grand isolation amplifier for car audio |
ROHM |
| 2289 |
BA3121F |
Ground isolation amplifier |
ROHM |
| 2290 |
BA3121F-E2 |
Ground Isolation Amplifier |
ROHM |
| 2291 |
BA3121N |
Ground isolation amplifier |
ROHM |
| 2292 |
BA3123F |
Ground Isolation Amplifier |
ROHM |
| 2293 |
BA3123F-E2 |
Ground Isolation Amplifier |
ROHM |
| 2294 |
BAR64-02V |
PIN Diodes - RF Switch (High isolation) in ultra-small SC79 Package |
Infineon |
| 2295 |
BAR64-03W |
PIN Diodes - PIN Diode for RF switches (high isolation) |
Infineon |
| 2296 |
BAR64-04 |
PIN Diodes - PIN Diode for RF switches (high isolation) |
Infineon |
| 2297 |
BAR64-04W |
PIN Diodes - PIN Diode for RF switches (high isolation) |
Infineon |
| 2298 |
BAR64-05 |
PIN Diodes - PIN Diode for RF switches (high isolation) |
Infineon |
| 2299 |
BAR64-05W |
PIN Diodes - PIN Diode for RF switches (high isolation) |
Infineon |
| 2300 |
BAR64-06 |
PIN Diodes - PIN Diode for RF switches (high isolation) |
Infineon |
| 2301 |
BAR64-06W |
PIN Diodes - PIN Diode for RF switches (high isolation) |
Infineon |
| 2302 |
BAR64-07 |
PIN Diodes - PIN Diode for RF switches (high isolation) |
Infineon |
| 2303 |
BAR80 |
Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss) |
Siemens |
| 2304 |
BAR81 |
Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
| 2305 |
BAR81W |
Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
| 2306 |
BAR89-02L |
PIN Diodes - PIN-Diode for high isolation, low loss antenna switch designs |
Infineon |
| 2307 |
BAS125 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
Siemens |
| 2308 |
BAS125-04 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
Siemens |
| 2309 |
BAS125-04W |
Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application) |
Siemens |
| 2310 |
BAS125-05 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
Siemens |
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